Structural, Dielectric and electrical properties of Antimony doped Strontium Bismuth Niobate ceramic
Rajveer Singh, Department of Physics, Atmaram Sanatan Dharma College, University of Delhi, Dhaula Kuan, New Delhi-110021, India.
Vandna Luthra, Department of Physics, Gargi College, University of Delhi, Siri Fort road, New Delhi-110049, India.
R.P.Tandon, Department of Physics and Astrophysics, University of Delhi, Delhi-110007, India.
Polycrystalline Sr0.8SbxBi(2.2-x)Nb2O9 (SSBN) was prepared using solid state reaction route. SSBN was characterized by X-ray diffraction (XRD) and scanning electron microscopy and Raman spectroscopy for structural analysis. The XRD reveals that SSBN has single phase orthorhombic structure. The dielectric and impedance spectroscopy studies on SSBN were investigated in the frequency range 20 Hz – 1 MHz and in the temperature range room temperature (RT) to 500 oC. The dielectric study reveals that SSBN have relaxor behavior at lower temperature.