Ahmed AKOUIBAA(1), Anouar JORIO(1), Izeddine ZORKANI(1)
1 Solid State Physics Laboratory, Faculty of Sciences, Dhar El Mahrez, B.P. 1796, Fes-Atlas, Morocco
The direct polarization of silicon PN junctions is accompanied by emission of light in the infrared. This emission is due to electron-hole recombination across the indirect gap. The reverse polarization is accompanied by a light emission in the visible. This phenomena is the subject of controversy since its discovery in 1955 by R. Newman. The main goal of this work is the study of the origin of the emitted light based on proton beam and temperature effect in Silicon and ZnO/Graphene nanorods samples.