Authors: Vishal Sharma & Vipul Saraf
Institute: Govt. G G M Science College Jammu, Jammu & Kashmir, India
In this research paper we have studied mathematically the Drain Source characteristics of single strand DNA(ssDNA)-Single Electron tunneling Transistor (SET) and the effect of random background charge on these characteristics using the "Orthodox" theory of single electron tunneling as applicable in ssDNA-SET. The equations are simulated using 'C' language and results are plotted graphically using Microcal Origin software and it has been observed that Background charge simply sifts the Coulomb blockade regime and thus affect the performance of ssDNA-SET.
Link of the paper:

Votes: 0
E-mail me when people leave their comments –

You need to be a member of The International NanoScience Community - to add comments!

Join The International NanoScience Community -


This reply was deleted.