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Advanced Materials Group is pioneering novel concept of ultra-low friction solid lubricant thin films based on transition metal dichalcogenides. Our microstructural design allows formation of a very thin tribolayer (several molecular layers), which significantly reduces friction and wear. The core objective of postdoctoral project is theoretical analysis of nanostructural transformation and tribolayer properties. Simulated tribolayer structure will be verified by advanced surface-sensitive analysis (TEM, EELS, XPS, AES, Raman); friction and nanowear will be evaluated by AFM/LFM.
The simulations will be performed in collaboration with partner institutions in the EU; study visit abroad during the project is envisaged. The successful candidate is expected to work effectively with mentor in the following areas of the physics scope and core competencies: interface physics, ab initio or molecular dynamics simulations, computational methods/algorithms research, development, and publication.

Minimum Job Requirements:
PhD in Physics, Chemistry or related field completed after March 29, 2008.
At least three published peer-review papers. Candidate’s educational background, a record of scientific excellence, motivation, and creativity will be important selection criteria.

Desired Skills:
Experience with nanoscale simulations (ab initio, molecular dynamics, etc) of crystalline materials.
Communication skills – applicant will collaborate with team (Postdocs and PhD students). Strong publication record.

Project duration
Starting date: as soon as possible
End date: 30th June 2015 (fixed-term contract)

Application
We are looking forward to your application including a short motivation letter, Curriculum Vitae, list of publications (three best publication attached) and names and addresses of three academic references. The documents should be sent to polcar@fel.cvut.cz.
The candidates on the shortlist will be invited to interview...

Deadline for Applications
23 March 2014

Salary
56 000 CZK (approx. 2100 €)

Job hours
Full-time

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