Optical Properties Dependence with Gas Pressure in AlN Films Deposited by Pulsed Laser Ablation
J A Pérez, H Riascos, J C Caicedo, G Cabrera and L Yate
This paper deals with the formation of AlN thin films as promising materials for the integration of SAW devices on Si substrates due to their good piezoelectric properties and the possibility of deposition at low temperature compatible with the manufacturing of Si integrated circuits.
Comments