Paper shared by Jaime Andrés Pérez Taborda
Optical emission spectroscopy of Aluminum Nitride thin films deposited by Pulsed Laser Deposition
JA Pérez, LP Vera, H Riascos, JC Caicedo
Abstract. In this work we study the Aluminium Nitride plasma produced by Nd: YAG pulsed laser,(λ= 1064 nm, 500 mJ, τ= 9 ns) with repletion rate of 10 Hz. The laser interaction on Al target (99.99%) under nitrogen gas atmosphere generate a plasma which is produced at room temperature; with variation in the pressure work from 0.53 Pa to 0.66 Pa matching with a applied laser fluence of 7 J/cm2. The films thickness measured by profilometer was 150 nm.
Comments