Nanostructured Semiconductor Nitride Optoelectronic Devices

The University of Bath has been active in the field of Nitride Semiconductors for over 10 years. It has the facilities for the growth, fabrication and characterisation of optoelectronic devices based on the group III nitrides, such as gallium nitride, aluminium nitride and indium nitride. In particular it has extensive experience of incorporating nanostructures into the growth and fabrication processes through advanced nanolithography techniques.

Applications are invited for motivated and practically-minded students with a background in physics, materials science, electronic engineering or a related discipline to work on nanostructured devices within this emerging field.

Prospective students should hold or expect to gain a First Class or Upper Second Class UK Honours degree or the equivalent from an overseas institution. Details on English proficiency requirements can be found on http://www.bath.ac.uk/engineering/graduate-school/pg-research/elecphd/index.html

Please send a full CV, a research motivation statement and letters of reference to Dr Philip Shields (p.shields@bath.ac.uk) in the first instance. Potential applicants are advised to discuss the research project with the project supervisor before applying to the University.

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