Researchers from the Rice University have developed highly transparent (95%), flexible, nonvolatile resistive memory devices based on silicon oxide (SiOx) and graphene. This research began in 2008 when they discovered that silicon oxide itself can be a switch.

The researchers placed the SiOx and crossbar graphene terminals on flexible plastic to make the simple memory devices which can be stacked in 3D and made in multi-state architectures:

http://www.graphene-info.com/highly-transparent-and-flexible-resistive-memory-made-silicon-and-graphene