Ala’eddin A. Saif

Microfabrication Cleanroom, School of Microelectronic Engineering, University Malaysia Perlis (UniMAP), Kuala Perlis, 02000 Perlis, Malaysia.

E-mail: alasaif82@hotmail.com

Abstract

Nanocrystalline Ba_1-xSr_xTiO₃ thin films of different Ba content have been fabricated on Pt/SiO₂/Si substrate using a sol-gel technique. The Perovskite structure of the films has been confirmed using XRD. AFM results have been presented in order to study the grain size of the films, which show that the grain size increases as the Ba content increases. The effect of the grain size on the dielectric and ferroelectric properties of the films has been investigated. C-V measurements show that the ferroelectric hysteresis strength increases as the grain size increases. However, the dielectric permittivity versus frequency plot shows that the dielectric constant varies inversely with the grain size.

References

[1] G Li, P Yu and D Xiao J. Electroceram. 21 (2008) 340-343.

[2] G Arlt, D Hennings and G De J. Appl. Phys. 58 (1985) 1619-1625.

[3] S H Hu, G J Hu, X J Meng, G S Wang, J L Sun, S L Guo, J H Chu and N Dai J. Cryst. Growth 260 (2004) 109-114.

[4] Ala’eddin A. Saif and P Poopalan Physica B 406 (2011) 1283-1288.

[5] A Dutta, T P Sinha, P Jena and S Adak, J. Non-Cryst. Sol. 354 (2008) 3952-3957.