Abhijeet Ojha ¹, Basant Choudhary¹ ,Manoj Kumar Jangid ¹ ,K.B.Sharma ¹    

                                    CCT ,University Of Rajasthan ,Jaipur ,India                                                                         

Zinc oxide (ZnO) is a transparent wide bandgap  semiconductor compound (Eg = 3.37 eV) with a direct electronic transition and has a large exciton binding energy (60 meV) that ensures high luminescence efficiency at room temperature. Similar to GaN , ZnO is considered as a promising material for photonic devices working in the ultraviolet and blue spectral regions.Recent studies have shown that ZnO exhibits many novel nanoscale structures, such as nanorods, nanowires,nanotubes, nano-needles, nanocombs and so forth,which open up new prospects for applications in micro-optoelectronic devices.
                  In addition, theoretical calculations have predicted that transition-metal-doped ZnO materials may exhibit room-temperature ferromagnetism.This offers opportunities for developing spintronic devices combining standard microelectronics with spin-dependent effects. Such spin-based devices are multifunctional and have very high integration density, ultra-fast data processing speed and low electrical power consumption. However, to realize this idea,  a thorough knowledge of the role of impurities and interaction mechanisms taking place in doped ZnO materials is essential.

References :-

[1] B. B. Lakshmi, C. J. Patrissi, C. R. Martin, Chem.Mater. 9, 2544 (1997).

[2] L. Vayssieres, K. Keis, A. Hagfeldt, S. E. Lindquist,

Chem. Mater. 13, 4395 (2001).

[3] C. Pacholski, A. Kornowski, H. Weller, Angew.

Chem. Int. Edn. Engl. 41, 1188 (2002).

[4] L. Vayssieres, Adv. Mater. 15, 464 (2003).