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 Authors: S. Ebschke, R.R. Poloczek, Klaus T. Kallis, H.L. Fiedler


Abstract: Based on silicon on insulator (SOI) technology [, a monocrystalline membrane is fabricated, in which a buried silicon dioxide layer in the silicon material is the sacrifice layer for the cavity. The membrane is a monocrystalline silicon top layer which contains nanoholes for creating the cavity in the buried oxide (BOX). To encapsulate the cavity the holes are sealed by using different techniques like non-stressed plasma-enhanced chemical vapour deposited (PECVD)-nitride and-oxide, thermal oxidation and evaporation of aluminum. To determine the sticking behavior of the membrane different sizes of membranes are fabricated and compared due to their sticking behavior. The experimental result shows that a membrane, having the size of 25 μm × 25 μm or below, has a perfect non-sticking behavior and can be used for further fabrication (cf. Fig. 8). For comparison, Figure 9 shows a membrane which delivers sticking behavior. The knowledge of this work can be widely used for several applications that need a cavity with a monocrystalline membrane like an absolute pressure sensor with a fully integrated CMOS-circuit on top of it [. This delivers a large variety of possibilities for novelty MEMS devices in different fields of research.


Direct link: http://www.scientific.net/JNanoR.25.49

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