The features in integrated circuits (IC) become so small that instrumentation with atomic scale resolving power is required for metrology and fault detection. Transmission Electron Microscopy (TEM) is the instrumentation of choice for the sub-22 nm generation IC. For identification of the atom type an energy dispersive X-ray (EDX) image is recorded at the same time as the Scanning Transmission Electron Microscopy (STEM) image. From both modalities together a fast inspection of the semi-conductor material should be made available.
The postdoctoral researcher will develop and validate a forward model for the simulation of both the electron and the element-specific X-ray images in STEM. Since the total inspection time is the most critical factor for IC device characterization, this model will be used to optimize the acquisition protocol based on IC blueprints. These simulations are also used to test and evaluate the advanced image reconstruction and analysis schemes developed by others in the project. The postdoc acts as the application specialist, integrating knowledge from electron imaging and semi-conductor applications. As such he/she should steer the development of acquisition and reconstruction schemes for fault detection in sub 22-nm IC’s.
The research of this Postdoc position will be performed mainly at the Quantitative Imaging Group in the department of Imaging Physics of the Delft University of Technology. Here also a Ph.D. student will work on the image processing aspects of the 3D fault detection. Exchange and collaboration will take place with a second PhD. student and another Postdoc working at the center for mathematics and computer science (CWI) in Amsterdam under the supervision of Prof.dr. Joost Batenburg. The industrial partners FEI in Eindhoven, The Netherlands, and IMEC in Leuven, Belgium, will be strongly involved during the project as leaders in tools for nanotechnology.
Dr. Bernd Rieger