Title of the paper:

Laser Patterning of Epitaxial Graphene for Schottky Junction Photodetectors

Authors: Ram Sevak Singh, Venkatram Nalla, Wei Chen, Andrew Thye Shen Wee*, and Wei Ji*

University/Institute: Department of Physics, National University of Singapore, Singapore 117542, Singapore.

Abstracts:

Large-area patterning of epitaxial graphene for Schottky junction photodetectors has been demonstrated with a simple laser irradiation method. In this method, semimetal–semiconductor Schottky junctions are created in a controllable pattern between epitaxial graphene (EG) and laser-modified epitaxial graphene (LEG). The zero-biased EG-LEG-EG photodetector exhibits a nanosecond and wavelength-independent photoresponse in a broad-band spectrum from ultraviolet (200 nm) through visible to infrared light (1064 nm), distinctively different from conventional photon detectors. An efficient external photoresponsivity (or efficiency) of 0.1 A·W^–1 is achieved with a biased interdigitated EG-LEG-EG photodetector. The fabrication method presented here opens a viable route to carbon optoelectronics for a fast and highly efficient photoconductive detector.

Links to the paper (link to the journal webpage): http://pubs.acs.org/doi/abs/10.1021/nn201757j