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Title of the paper:
University/Institute: Department of Physics, National University of Singapore, Singapore 117542, Singapore.
Large-area patterning of epitaxial graphene for Schottky junction photodetectors has been demonstrated with a simple laser irradiation method. In this method, semimetal–semiconductor Schottky junctions are created in a controllable pattern between epitaxial graphene (EG) and laser-modified epitaxial graphene (LEG). The zero-biased EG-LEG-EG photodetector exhibits a nanosecond and wavelength-independent photoresponse in a broad-band spectrum from ultraviolet (200 nm) through visible to infrared light (1064 nm), distinctively different from conventional photon detectors. An efficient external photoresponsivity (or efficiency) of 0.1 A·W–1 is achieved with a biased interdigitated EG-LEG-EG photodetector. The fabrication method presented here opens a viable route to carbon optoelectronics for a fast and highly efficient photoconductive detector.
Links to the paper (link to the journal webpage): http://pubs.acs.org/doi/abs/10.1021/nn201757j