Gender
Male
Location
Trichirapalli, Tamilnadu
Birthday:
June 24
I am...
Engineer
My research field or area of interest innanotechnology
Nanodevices Modeling and Simulation
Interest in...
Nanobiosensor
Publication list
International Journals 1. Ramesh R, Madheswaran M, Kannan K. Optical Effects on the Characteristics of the Uniformly Doped Nanoscale FinFET. J Nanoelect and Optoelect 2010; 5: 89-101. 2. Ramesh R, Madheswaran M, Kannan K. Optical Effects on the Characteristics of a Nanoscale FinFET. Prog Electmag Res B 2010; 21: 235-255. 3. Ramesh R, Madheswaran M, Kannan K. A WKB interpolation-Wavelet method for 3-D Numerical Simulation of nanoscale FinFET photodetector including Quantum Mechanical Effects. J Optoelect Adv Mat 2010; 12: 2044 – 2051. 4. Ramesh R, Madheswaran M, Kannan K. Optical characterization of biological tissues using nanoscale FinFET photodetector. J Optoelect Adv Mat 2010; 12: 2044 – 2051. 5. Ramesh R, Madheswaran M, Kannan. Numerical Simulation of Nanoscale FinFET Photodetector for Optimal Detection of Biological Signals Using Interpolating Wavelets. Prog Electmag Res B 2011; 31: 239-260. 6. Ramesh R, Madheswaran M, Kannan K. Self consistent 3-D Numerical Modeling of a uniformly doped Nanoscale FinFET including quantum mechanical effects. J Comp Electr, Springer Verlag 2011; 10:331-340. DOI: 10.1007/s 10825-011-0368-5. 7. Ramesh R, Madheswaran M, Kannan. Nanoscale FinFET Sensor for determining the breast cancer tissues using Wavelet Coefficients. J Mech Med and Biology, World Scientific Journals 2011;11:1295-1314. DOI:10.1142/S0219519411004186. 8. Ramesh R, Madheswaran M, Kannan K. 3-D Numerical Modeling and simulation of Nanoscale FinFET for the application in ULSI circuits. Physica E, Low-dimensional systems & Nanostructures, Elsevier 2011;44: 80-86. 9. Ramesh R, Madheswaran M, Kannan K. Physical Noise Model of a Uniformlydoped Nanoscale FinFET Photodetector. Optik, Elsevier, 2012; 123 : 1087–1094, DOI: 10.1016/j.ijleo2011.07.037. International Conferences 1. Ramesh R, Madheswaran M, Kannan. Three dimensional quantum effects in nanoMOSFETs. IEEE Conf. on Recent Advances in Microwave Theory and Applications , 2008. DOI 10.1109/AMTA.2008.4763067.
Researchgroup, Institute, University, School, Company name
Device Modeling Group, M.A.M College of Engg, Anna University
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