Gender
Male
Location
BHUBANESWAR, ODISHA
Birthday:
June 3
I am...
Engineer
My research field or area of interest innanotechnology
Modeling and Simulation of GaN based HEMT for High- Power and High Frequency Electronics
Interest in...
Semiconductor Device Modeling, Device Physics, MOSHEMTs, HEMTs, Tunnel FETs, Novel Device Structures, TCAD simulations, IC Fabrication, VLSI Circuits.
Publication list
1. K. Jena, R. Swain, and T. R. Lenka, “Physics-Based Mathematical Model of 2DEG Sheet Charge Density and DC Characteristics of AlInN/AlN/GaN MOSHEMT”, Accepted in Int. Journal of Numerical Modeling, 2015. (Wiley) [IF: 0.629 (2014), SCI, JCR]. 2. K. Jena, R. Swain, T.R. Lenka, “Impact of oxide thickness on gate capacitance-Modeling and Comparative Analysis of GaN based MOSHEMTs”, Pramana-Journal of Physics, 2015. (Springer)[IF: 0.720 (2013),SCI, JCR]. DOI: 10.1007/s12043-015-0948-1 3. K. Jena, R. Swain, and T. R. Lenka, “Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices”, Int. Journal of Numerical Modeling, Feb, 2015.(Wiley) [IF: 0.629 (2014), SCI, JCR]. DOI: 10.1002/jnm.2048 4. R. Swain, K. Jena and T. R. Lenka, “Interface DOS Dependent Analytical Model Development for DC Characteristics of Normally-off AlN/GaN MOSHEMT”, Superlattices and Microstructures, Vol. 84, pp.54-65, 2015. (Elsevier) [IF: 2.097 (2014), SCI, JCR]. DOI:10.1016/j.spmi.2015.04.025 5. R. Swain, K. Jena and T. R. Lenka, “Model Development for I-V and Transconductance Characteristics of Normally-off AlN/GaN MOSHEMT,” Accepted in Semiconductors, 2015. (Springer) [IF: 0.739 (2014), SCI, JCR]. 6. K. Jena, R. Swain, T.R. Lenka, “Impact of barrier thickness on gate capacitance—Modeling and Comparative analysis of GaN based MOSHEMTs”, Journal of Semiconductors, vol. 36, no. 3, Mar. 2015.(IOP Science). DOI: 10.1088/1674-4926/36/3/034003. 7. R. Swain, J. panda, K. Jena and T. R. Lenka, “Modeling and Simulation of Oxide Dependent 2DEG Sheet Charge Density in AlGaN/GaN MOSHEMT”, Journal of Computational Electronics, vol. 14, no. 03, pp. 754-761, 2015. (Springer) [IF: 1.520 (2014) SCIE, JCR]. DOI 10.1007/s10825-015-0711-3 8. K. Jena, B. Bhowmick and S. Baishya, “Simulation and Optimization of a Partial Gate All Around Cylindrical Tunnel FET”, International Journal of Recent Technology and Engineering, vol. 2, no. 5, pp. 43-45, 2013. B. International Referred Conferences: 1. R. Swain, K. Jena, T. R. Lenka, G.N. Dash & A.K. Panda, “DC and RF characteristics of normally-off AlN/GaN MOSHEMT by varying oxide thickness”, “IEEE conference on Electron Devices and Solid-State Circuits” 01-04, June.2015, Singapore. (IEEE Xplore) 2. J. Panda, K. Jena and T. R. Lenka, “Comparative Analysis of GaN based MOSHEMT Devices for RF Applications", “International Conference on Electrical, Computer and Communication Technologies (IEEE ICECCT)”.05 - 07, Mar. 2015, Coimbatore, TN, India. (IEEE Xplore) 3. K. Jena, B. Bhowmick, S.N. Mishra, “Length Scaling Effect on 3D Hetero Junction SOI Tunnel FET”, 2nd International Conference on Recent Trends in Engineering Sciences. 15-16 March, 2014, Nashik, India. (Elsvier) 4. K. Jena and B. Bhowmick, “Analysis of Process Flow for n Type TUNNEL FET Using TCAD Process and Device Simulation”, 2nd International Conference on Recent Trends in Engineering Sciences, 15-16 March, 2014, Nashik, India. (Elsvier) 5. R. Swain, K. Jena, A. Gaini & T. R. Lenka, “Comparative Study of AlN/GaN HEMT and MOSHEMT Structures by Varying Oxide Thickness”, “IEEE Nanotechnology Materials and Devices Conference” 12-15 Oct, 2014, Aci Castello,Italy.(IEEE Xplore) 6. B. Bhowmick, K. Jena and S. Baishya, “A Self-Consistent Model for Hetero-Gate All Around Tunnel FET”, IEEE International Conference on Devices, Circuits and Systems, 6-8 Mar, 2014, Coimbatore, TN, India. (IEEE Xplore) 7. K. Jena, B. Bhowmick, S. Baishya , “Digital circuit performance of Si-Ge pocket high-k gate dielectric SOI Tunnel FET”, International Conference on control, communication, power engineering, 26-27 April, 2013, Bangalore, INDIA. (Springer) C. Books: 1. K. Jena, B. bhowmick. “Optimization of 3 dimensional tunnel FET and its digital applications,” Lambert Academic publishing, Germany, November 14, 2014.
Researchgroup, Institute, University, School, Company name
NATIONAL INSTITUTE OF TECHNOLOGY SILCHAR
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