My research field or area of interest innanotechnology
Nanoscience and nanotechnology Semiconductor device, processing and characterization technology; Fabrication of non-volatile memory devices (nanocrystal flash memory, resistive switching memory); Silicide and germanide gate electrode and Schottky diode; Photovoltaic device fabrication and characterization technology
Non volatile memory
Book Chapter/ Review (Published 02, under review 02): 1. “Metal Nanocrystal Floating Gate Memory Devices”; D. Panda, A. Dhar and S.K. Ray, In: Advances in Microelectronics and Photonics; Editor: Satyabrata Jit; ISBN 978-1-61470-956-5; 2011 Nova Science Publishers, Inc., Chapter 2, pp.-25-59, (2011). 2. “Growth, dielectric properties, and memory device applications of ZrO2 thin films” Critical review; Debashis Panda and Tseung-Yuen Tseng, Thin Solid Films (2013), in press. 3. “Perovskite oxides as resistive switching memories- a review”; Debashis Panda and Tseung-Yuen Tseng, under review. International Journals (09): 1. “Optical characteristics of Er3+- doped Ge nanocrystals in sol-gel derived SiO2 glass”; K. Das, V. Nagarajan, M.L. NandaGoswami, D. Panda, A. Dhar and S.K. Ray; Nanotechnology, 18, 095704 1-5 (March 2007) [SCI]. 2. “Characteristics of DC Magnetron Sputtered Ternary Cobalt-Nickel Silicide Thin Films for Ultra Shallow Junction Devices”, D. Panda, A. Dhar and S.K. Ray, Microelectronic Engineering, 85, 559-565 (March 2008) [SCI]. 3. “Synthesis and Characterization of Nickel Titanium Melt-spun Ribbon for Micro-actuator Device Application”; D. Panda, M. Ranot, K. Das, D. Bhattacharya, A. Dhar, M. Chakraborty and S. K. Ray; Indian Journal of Engineering & Materials Sciences, 15(2), 95-98 (April 2008) [SCI]. 4. “Fabrication and Schottky Barrier Characterization of Cobalt-Nickel Silicide/n-Si Schottky Diodes for Scaled-Si CMOS Applications”; Debashis Panda, Achintya Dhar and Samit K. Ray; IEEE Trans. Electron Devices, 55(9), 2403-2408, (September 2008) [SCI]. 5. “Memory characteristics of Nickel Nanocrystals with High-k Dielectric Tunneling Barrier”; D. Panda, S. Maikap, A. Dhar and S. K. Ray; Electrochemical and Solid-State Lett. 12(1), H7-H10, (2009) [SCI]. 6. “Improved charge storage characteristics of nickel nanocrystals embedded in high k dielectric for flash memory devices” Debashis Panda, Achintya Dhar and Samit K. Ray; Semiconductor Science and Technology, 24, 115020, (2009) [SCI]. 7. “Nonvolatile and Unipolar Resistive Switching Characteristics of Pulsed Laser Ablated NiO Films” D. Panda, A. Dhar and S.K. Ray; Journal of Applied Physics, 108, 104513 1-104513 7, 2010 [SCI]. 8. “Non-volatile Memristive Switching Characteristics of TiO2 Films Embedded With Nickel Nanocrystals”; Debashis Panda, Achintya Dhar and Samit K. Ray; IEEE Trans. Nanotechnology; 11(1), 51-55, 2012 [SCI]. 9. “Resistive Switching Characteristics of Nickel-Silicide layer Embedded HfO2 Film”; Debashis Panda, Chun-Yang Huang and Tseung-Yuen Tseng; Applied Physics Letter, 100, 112901 1-112901 5, 2012 [SCI].
Researchgroup, Institute, University, School, Company name
Department of Electronics Engineering and Institute of Electronics; National Chiao Tung University
Researchgroup, Institute, Company, University, School webpage
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