Gender

Male

Location

COIMBATORE

Birthday:

January 20

I am...

Engineer, Nanotech Journalist

My research field or area of interest innanotechnology

NANOELECTRONICS, VLSI

Interest in...

FABRICATION AND MODELLING

Publication list

 Nirmal .D, Vijayakumar .P, Shruthi and Mohan Kumar .N “Nanoscale Channel Engineered Double Gate MOSFET for Mixed Signal Applications using High-k Dielectric”, International journal of circuit theory and applications. (Wiley)Voiume 41, Issue 6, pp 608-618,2013. ( Impact Factor: 1.759).  Nirmal .D, Vijayakumar .P, Patrick Chella Samuel , Binola k Jebalin, and Mohan Kumar .N “Subthreshold analysis of nanoscale FinFETs for ultra low power application using high-k materials”, International Journal of Electronics.(Taylor and Francis) Volume 100, Issue 6,pp 803-817,2013. (Impact factor: 0.440).  Nirmal .D, Vijayakumar .P, Divya .D , Binola k Jebalin, and Mohan Kumar .N “Subthreshold Performance of Gate Engineered FinFET Devices and circuit with High-k Dielectrics”, Microelectronics Reliability(Elsevier) 53 (2013) 499–504. (Impact factor: 1.167).  Nirmal. D , Nalini .B and Cyril Robinson Azariah “ Fabrication and Characteristics of Flexible Thin Film Depletion Mode Field Effect Transistor (FET) using High-κ Dielectric Nano Zirconia” International Journal of Emerging Trends in Engineering and Development, Issue 3, Vol.2 pp.295-299. (March 2013).  Nirmal .D and Vijayakumar .P “Fin Field Effect Transistors Performance in Analog and RF for High-k Dielectrics” Defence Science Journal, Vol. 61, No. 3, pp. 235-240, May 2011. (Impact factor:0.304)  Nirmal .D, Shruti .K, Divya Mary Thomas, Patrick Chella Samuel, Vijayakumar .P and Mohan Kumar .N “Impact of Channel Engineering on FINFETs using High-k dielectrics” International Journal of Micro and Nano Electronics, Circuits and Systems, 3(1), pp. 7-11, 2011.  Nirmal .D, Nalini .B and Vijayakumar .P “Nano sized High K Dielectric Material for FINFET”, Integrated Ferroelectrics(Taylor and Francis), Volume 121, Issue 1, pp. 31 – 35, 2010.(Impact Factor: 0.264)  Nirmal .D, Vijayakumar .P and Sam Jebaraj “NAND Gate Using FINFET for Nanoscale technology”, International Journal of Engineering Science and Technology Vol.2 (5), pp. 1351-1358, 2010.  Nirmal .D and Vijayakumar .P “Gate Engineering on the Analog Performance of DM-DG MOSFETs with High K Dielectrics”, International Journal of Advanced Science and Technology Vol. 25, pp. 1-6, December, 2010.

Researchgroup, Institute, University, School, Company name

KARUNYA UNIVERSITY

Researchgroup, Institute, Company, University, School webpage

https://www.karunya.edu/

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