Gender

Male


Location

Gwalior, M.P.


Birthday:

July 10


I am...

Physicist, Teacher


My research field or area of interest innanotechnology

Condensed Matter Theory Phase Transitions Bulk and Nano Materials properties Micro and Nano Devices IT applications


Interest in...

developing academic and scientific relationship for the development of science and technology for a peaceful and safe future of human being.


Publication list

1. NH3 and PH3 adsorption through single walled ZnS nanotube: First Principle insight Md. Shahzad Khan, Anurag Srivastava, Rajneesh Chaurasiya, Mohd. Shaid Khan, Piyush Dua Chemical Physics Letters 07/2015; Accepted 2. Dopant-configuration controlled carrier scattering in graphene Benoy Anand, Mehmet Karakaya, Gyan Prakash, S. Siva Sankara Sai, Reji Philip, Paola Ayala, A. K. Sood, Anurag Srivastava, Apparao Rao and Ramakrishna Podila RSC Adv., 2015, Accepted Manuscript, DOI: 10.1039/C5RA05338B 3. Electron transport properties of a single-walled Carbon nanotube in the presence of hydrogen cyanide: first-principles analysis Anurag Srivastava, Vikash Sharma, Kamalpreet Kaur, Md. Shahzad Khan, Rajeev Ahuja, V. K. Rao Journal of molecular modelling 21:7 2015 Jul pg 2720 4. NO adsorption studies on silicene nanosheet: DFT investigation R. Chandramouli, Anurag Srivastava, V. Nagarjan Applied Surface Science 06/2015; Accepted. DOI:10.1016/j.apsusc.2015.05.166 5. Band structure and transport studies on impurity substituted InSe Nanosheet – A first-principles investigation Anurag Srivastava and R. Chandramouli Superlattices and Microstructures, Volume 79, March 2015, Pages 135–14 6. Electronic Transport Properties of BN sheet on Adsorption of Ammonia (NH3) Gas, Anurag Srivastava, Chetan Bhatt, Sumit Kumar Jain, Pankaj Mishra and Ranjeet Brajpuria Journal of Molecular Modelling Mar;21(3):2595. doi: 10.1007/s00894-015-2595-3. 2015 7. Doped Islands for better performance of Molecular Single-Electron Transistor: First Principles Analysis, Anurag Srivastava, Vikas Sharma, B. Shanti Bhushan, Kamalpreet, Mohd. Shahzad Khan and Mohd. Shahid Khan Journal of Electronic materials (Communicated) 2015 8. Ab-initio analysis of Mechanical Properties of CeX (X=N, P, As, Sb), Anurag Srivastava, Madhu Sarwan, Neha Tyagi and Sadhana Singh Advance Science Letter (Accepted) 2015 9. Electronic Properties of Defected Silicene Sheet Neha Saxena and Anurag Srivastava Advanced Science Letters Volume 20, Numbers 7-9, pp. 1605-1607(3) 2014 10. Ab-initio Analysis and Impurity added benzene based multi-island Single Electron Transistor Kamalpreet, Vikas Sharma and Anurag Srivastava Advanced Science Letters 20, 1535-1539 2014 11. Stability and Bandgap Analysis of Fe doped GaN Nanotubes Sumit Kumar Jain and Anurag Srivastava Advanced Science Letters 1624-1630 , 2014 12. Electronic Properties of Graphene Based Hydrogen Cyanide Sensor Vikash Sharma , Arvind Tyagi, and Anurag Srivastava Advanced Science Letters 20, 1570-1573, 2014 13. Doping induced Structural Stability and Electronic Properties of GaN nanotubes, Anurag Srivastava, Mohammad Irfan Khan, Neha Tyagi and Purnima Swaroop Khare The Scientific World Journal 2014(2014) Article ID 984591 14. Ab-initio study of Structural, Electronic and Transport Properties of Zigzag GaP Nanotubes, Anurag Srivastava, Sumit Jain and Purnima Swarup Khare, J. Mol. Modelling (2014)20:2171doi: 10.1007/s00894-014-2171-2 15. Orientation Dependent Performance Analysis of Benzene/Graphene Based Single Electron Transistor, Anurag Srivastava, Kamalpreet, Ritu Sharma, Priyanka Chauhan, Uma Shankar Sharma, Chetan Pathak, Journal of Electronic Materials (2014) doi: 10.1007/s11664-014-3272-5 16. Ab-initio study of napthelene based conducting polymer, Ankur Ruhela, Reena Kanchan, Anurag Srivastava and O. P. Sinha American Institute of Physics Conference Proceeding 5/2014; 1591:225 17. Study of electronic transport properties of doped 8AGNR, Uma Shankar Sharma, Anurag Srivastava, U. P. Verma American Institute of Physics Conference Proceeding 5/2014; 1591:1386 18. A Junctionless MOSFET with Triple Material Gate, Sumit Singh Saib and Anurag Srivastava Journal of Computational and Theoretical Nanoscience (2014) Accepted 19. Impact of HfO2 in Graded Channel Dual Insulator Double Gate MOSFET, Sumit Singh Saib, Shekhar Yadav, Jagdeep Rahul, Anurag Srivastava and Balwindar Raj Journal of Computational and Theoretical Nanoscience (2014) Accepted 20. Band Gap Analysis of Zigzag shaped Hydrogen Passivated GaN Nanotubes, Mohammad Irfan Khan, Anurag Srivastava and Neha Tyagi Journal of Quantum Matter (2014) Accepted 21. Electronic Properties of Hydrogenated GaAs SWNTs Sumit Kumar Jain, Anurag Srivastava, Neha Tyagi, and Poornima Swaroop Khare Journal of Quantum Matter (2014) Accepted 22. Structural and Elastic Properties of ZrN and HfN: Ab initio Study, Anurag Srivastavaand Bhoopendra Dhar Diwan Canadian Journal of Physics 10.1139/cjp-2013-0377(2013) 23. Charge Stability and Conductance Analysis of Anthracene Based Single Electron Transistor, Anurag Srivastava, Boddepalli Santhibhushan and Pankaj Dobwal, International Journal of Nanoscience 12,1350045(2013) 24. TCAD assessment of dielectrics and channel doping impact in Junctionless double gate MOSFET. Boddepalli Santhibhushan, Pankaj Dobwal and Anurag Srivastava Journal of Computational and Theoretical Nanoscinece (Under publication) 25. InGaAs and HfO2 Based Junctionless Vertical Double Gate MOSFET: Performance Analysis Pankaj Dobwal, Boddepalli Santhibhushan and Anurag Srivastava Journal of Computational and Theoretical Nanoscinece (under publication) 2013 26. Pressure Induced Phase Transition and Thermo Physical Properties of Cubic Refractory Metal Nitrides: Theory Anurag Srivastava and Bhoopendra Dhar Diwan Canadian Journal of Physics, 2013, 91(1): 27-33, 10.1139/cjp-2012-0149 27. Structural and Electronic Properties of AlAs Nanocrystal: Ab-initio Study Anurag Srivastava and Neha Tyagi Journal of Computational and Theoretical Nanoscience Vol.10(5), 2013, pp. 1222-1230 28. Performance analysis of impurity added benzene based single-electron transistor Anurag Srivastava, B. Santhibhushan and Pankaj Dobwal Applied Nanoscience DOI 10.1007/s13204-013-0194-0 29. First-principle study of structural and electronic properties Gallium based nanowires Anurag Srivastava, Neha Tyagi and Rajeev Ahuja Solid State Sciences , Vol.23, 2013, Pages 35–41 30. Silicene and Germanene: A First Principle Study of Electronic Structure and Effect of Hydrogenation-Passivation Shyam Trivedi, Anurag Srivastava and Rajnish Kurchania Journal of Computational and Theoretical Nanoscience DOI:doi:10.1166/jctn.2014.3428(2013) 31. Electronic and Transport Properties of Silicene Nanoribbons Shyam Trivedi, Anurag Srivastava and Rajnish Kurchania Journal of Computational and Theoretical Nanoscience. DOI:doi:10.1166/jctn.2014.3429 (2013) 32. Effect of Stone-Wales Defects on Electronic Properties of CNTs: Ab-initio Study Anurag Srivastava, Noopur jain and A. K. Nagawat Quantum Matter Vol. 2 (4) , pp. 307-313 (2013) 33. Conductance analysis of Zigzag Carbon Nanotubes under Stress: ab-initio study Anurag Srivastava, Nileshi Saraf and A. K. Nagawat Quantum Matter Vol.2(5), pp. 401-407 (2013) 34. Electronic Properties of Nitrogen doped Armchair Singlewall nanotube: Ab-initio Study Anurag Srivastava, Srashti Jain and A. K. Nagawat Quantum Matter Vol. 2(6), pp. 469-473(5) (2013) 35. Ab-initio Study of Structural and Electronic Properties of α-Ge Nanowires Neha Tyagi, Anurag Srivastava and Ravi Pandey Journal of Computational and Theoretical Nanoscience (Accepted )(2013) 36. Electronic Properties of GaN Nanotube: Ab initio study Kavita Rao Khaddeo, Anurag Srivastava and Rajnish Kurchania Journal of Computational and Theoretical Nanoscience Vol. 10, pp. 2066-2070, 2013 37. High Pressure Behaviour of AlAs Nanocrystal: First Principle Study Anurag Srivastava and Neha Tyagi High Pressure Research Vol 32: 43-47 (2012) 38. Structural and Electronic Properties of AlX(X=As, P, Sb) Nanowires: Ab initio study Anurag Srivastava and Neha Tyagi Mat. Chem. Physics Vol. 137, pp. 103-112 (2012) 39. Pressure Induced Phase Transitions in 1-D ZnO nanocrystal: Ab initio study Anurag Srivastava and Neha Tyagi Int. J. of Nanoscience Vol. 11,No.5, pp 1250035-7 (2012). 40. Structural and Electronic Properties of Sn Nanostructures Neha Tyagi and Anurag Srivastava Invertis Journal of Science and Technology, Vol. 5, No. 2, pp. 1-3 (2012). 41. Pressure-induced phase transition and electronic properties of AlN nanowires: an ab initio study Anurag Srivastava and Neha Tyagi International Journal of Phase Transitions iFirst, 1-13 (2012). 42. Pressure induced phase transition in Ga1-xInxAs alloys: Ab initio study Anurag Srivastava and Neha Tyagi International Journal of High Pressure Research iFirst, pp. 1-10 (2012). 43. Width Dependent Electronic Properties of Graphene Nanoribbons: An ab-initio study Anurag Srivastava, Arpit Jain, Rajnish Kurchania and Neha Tyagi J.Comput. Theor. Nanosci. 9, 1-6 (2012) 44. Diameter Dependent Electronic Properties of Zigzag Single Wall BX(X=N. As, P) Nanotubes: An ab-initio study Anurag Srivastava, Maya Sharma, Neha Tyagi and S.L. Kothari J. Comput. Theor. Nanosci. Vol.9, 1693-1699 (2012). 45. Elastic and Thermodynamic Properties of Divalent Transition Metal Carbides MC (M= Ti, Zr, Hf, V, Nb, Ta) Anurag Srivastava and Bhoopendra Dhar Diwan Can. J. Physics Vol 90(4): 359-364 (2012) 46. Impact of Web Enabled Knowledge Platform: An Analysis J. Durag Prasad Rao and Anurag Srivastava I. J. C. S. M. S Vol 4 (1); pp1-7 (2012) 47. Impact of ICT enabled Distance Learning Models on Learner’s Performance J. Durag Prasad Rao and Anurag Srivastava Asian Journal of Computer Science and Technology (AJCST) Accepted for June Issue (2012) 48. Pressure Induced Phase Transition and Electronic Properties of GaN Nanocrystals: Ab-initio Study Anurag Srivastava and Neha Tyagi International Conference on Recent Trends in Applied Physics and Material Sciences (RAM-2013) held during 01-02 Feb. 2013, at Govt. College of Engineering and Technology, Bikaner 49. Structural and electronic properties of GaSb nanocrystals: Ab-initio Study Neha Tyagi and Anurag Srivastava, Nano India-2013 held during 19-20 Feb. 2013, at Thruvananthapuram-Kerala, India. 50. Pressure induced structural phase transition in GaP nanocrystal: Ab-initio study Neha Tyagi and Anurag Srivastava 15th International Conference of International Academy of Physical Sciences (CONIAPS XV), held on 9-13 Dec. 2012 at Rajamangala University of Technology, Thanyaburi, Thailand. 51. Structural and Electronic Properties of Elemental Nanowires: Ab-initio Study Anurag Srivastava, Neha Tyagi 16th International Workshop on Computational Physics and Materials Science: Total Energy and Force Methods held during 10-12 Jan. (2013) at ICTP, Trieste, Italy. 52. Size Dependent Electronic Properties of ZnO nanowire: Ab-initio Study Anurag Srivastava, Neha Tyagi 16th International Workshop on Computational Physics and Materials Science: Total Energy and Force Methods held during 10-12 Jan. (2013) at ICTP, Trieste, Italy. 53. Pressure Induced Phase Transition in GaN Nanocrystal Anurag Srivastava and Neha Tyagi Poster is accepted in “2nd Virtual Nanotechnology Poster Conference- Nanopaprika Poster 2012”, P12-39, held from Sept. 10 to Sept.14 (2012) 54. Structural phase transition and electronic properties of AlP nanocrystals Neha Tyagi and Anurag Srivastava Presented in “Intl. Conference on Materials Science and Technology, (ICMST-2012)”, held from 10-14 June 2012 at St. Thomas College, Kottayam, Kerala. Presented papers will be published in the Institute of Physics Journal IOP Conference Series: Materials Science and Engineering. 55. Structural and Electronic Properties of alpha phase Ge Nanowires: An ab-initio study Neha Tyagi and Anurag Srivastava Presented in “Intl. Conference and Workshop on Nanostructured Ceramics and other Nanomaterials (ICWNCN-2012)”, held on 14-16 March 2012 at University of Delhi. 56. Pressure Induced Zincblende to Rocksalt Phase Transition in AlN Nanocrystals Anurag Srivastava and Neha Tyagi Journal of Physics: Conference Series 377, 012066 (2012). 57. Pressure-induced Structural Phase Transitions in Ti1-xZrxC Solid Solution Bhoopendra Dhar Diwan and Anurag Srivastava Journal of Physics: Conference Series 377, 012091 (2012). 58. Pressure Induced Phase Transition in GaN Nanocrystal Anurag Srivastava and Neha Tyagi Poster is accepted in 2nd Virtual Nanotechnology Poster Conference- Nanopaprika Poster 2012, P12-39, held from Sept. 10 to Sept.14 (2012). 59. Structural phase transition and electronic properties of AlP nanocrystals Neha Tyagi and Anurag Srivastava Presented in Intl. Conference on Materials Science and Technology, (ICMST-2012), held from 10-14 June 2012 at St. Thomas College, Kottayam, Kerala. Presented papers will be published in the Institute of Physics Journal IOP Conference Series: Materials Science and Engineering. 60. Structural and Electronic Properties of alpha phase Ge Nanowires: An ab-initio study Neha Tyagi and Anurag Srivastava Presented in Intl. Conference and Workshop on Nanostructured Ceramics and other Nanomaterials (ICWNCN-2012), held on 14-16 March 2012 at University of Delhi. 61. Structural Phase Transition and Electronic Properties of AlSb Nanocrystals Neha Tyagi and Anurag Srivastava Intl. Conf. on Nanoscience, Engineering and Technology (ICONSET 2011) Published in IEEE 978-1-4673-0073-5/11/$26.00 @2011 IEEE pp 489-491 (2011). 62. Electronic Properties of Zigzag shaped Si and Pb Nanowires Neha Tyagi and Anurag Srivastava Presented in “13th Intl. Conf. of International Academy of Physical Science (CONIAPS-XIII)” Organized by University of Petroleum and Energy studies, Dehradun, 14-16 June (2011) (Proceedings of the CONIAPS-XIII will be published in Journal of the International Academy of Physical Sciences). 63. Performance Evaluation of Junctionless Vertical Double Gate MOSFET Jagdeep Rahull, Anurag Srivastava, Shekhar Yadav, and Kamal Kishor Jha International Conference on Devices, Circuits and Systems (ICDCS 2012), IEEE Xplore 10.1109/ICDCSyst.2012.6188796 64. TCAD Assessment of None on vent iona I Dual Insulator Double Gate MOSFET Shekhar Yadav, Anurag Srivastava, Jagdeep Rahul, and Kamal Kishor Jha International Conference on Devices, Circuits and Systems (ICDCS 2012), IEEE Xplore 65. Role of Gate Materials in Performance Enhancement of Junctionless Double Gate Vertical MOSFET Jagdeep Rahul,Shekhar Yadav and Anurag Srivastava International Conference on Nanomaterials and Electronics Engineering (ICNEE 2012) 66. Performance Evaluation of Graded Channel Dual Insulator Double Gate MOSFET Shekhar Yadav and Anurag Srivastava International Journal of Electronics (Communicated) 2012 67. Pressure-induced phase transition in Ti1-xVxC solid solution B.D. Diwan and Anurag Srivastava Journal of International Academy of physical Sciences Vol.15 pp 1-7 (2012) ISSN 0974-9373. 68. First principle study of Structural and Electronic properties of Silicon Nanowires Anurag Srivastava, Neha Tyagi and R. K. Singh J.Comp. Th. Nanoscience Vol. 8(8), 1418-1423 (2011) 69. Structural and Electronic Properties of Lead Nanowires: Ab-initio study Anurag Srivastava, Neha Tyagi and R. K. Singh Mat. Chem. and Phys. Vol. 127(3), 489 - 494 (2011) 70. Pressure induced phase transformation and electronic properties of AlAs Anurag Srivastava, Neha Tyagi, Uma Shankar Sharma and R. K. Singh Mat. Chem. Phys. 125, 66–71 (2011) 71. High Pressure Phase Transitions in Transition Metal Carbides XC(X=Ti, Zr, Hf, V, Nb, Ta): A first principle study Anurag Srivastava, Mamta Chauhan and R. K. Singh Phase Transitions, 84(1) 58–66 (2011) 72. High Pressure Phase Transitions in Mg1-xCaxO: Theory Anurag Srivastava, Mamta Chauhan, Rishikesh Padegaonkar and R. K. Singh Physica Status Solidi(b) Vol 248, 8, 1901-1907 (2011) 73. Pressure induced phase transitions in transition metal nitrides: Ab-initio study Anurag Srivastava, Mamta Chauhan and R. K. Singh Physica Status Solidi(b) vol. 248, 12, 2793-2800 (2011) 74. Integrated routing protocol for opportunistic networks Anshul Verma and Anurag Srivastava International Journal of Advanced Computer Science and Applications(IJACSA)2(3) (2011) 75. Structural Stability of GaAs Nanocrystal Anurag Srivastava, Neha Tyagi and R. K. Singh American Institute of Physics 1349, 317-318 (2011) 76. Structural Phase Transitions in TiN1-xCx B. D. Diwan, Anurag Srivastava and R. K. Singh American Institute of Physics 1349, 135-136 (2011) 77. Electronic properties of AlN nanocrystal: A First Principle Study Neha Tyagi and Anurag Srivastava American Institute of Physics, vol 1372, 252-262 (2011) 78. Structural stability of Titanium Nitride: A first principle study Mamta Chauhan and Anurag Srivastava American Institute of Physics vol 1372, 256-258 (2011) 79. Ab-Initio Study of Zigzag Single Wall Carbon Nanotubes Uma Shankar Sharma, Anurag Srivastava, U. P. Verma and R. K. Singh J. Comp. Th. Nanoscience 7 1–3 (2010) 80. Gate Leakage Reduction Through Dual Material Single Layer Segmentation of Insulator with High K/Metal Gate Kamal Kishore Jha and Anurag Srivastava IJEEE, 1, 17-21 (2010) 81. Low Voltage Regulated Cascode Current Mirrors Suitable for Sub-1V Operation Prateek Bajpai , Anurag Srivastava, S. S,. Rajput and G. K. Sharma Int .Conf APCCAS, (2010). 82. Performance Analysis of NMOS for Higher Speed and Low Power Applications Kamal Kishore Jha, Ankita Jain, Manisha Pattanaik and Anurag Srivastava DATICS-Future Tech 2010’ IEEE Conference at South Korea.link 978-1-4244-6949-9/10/$26.00 ©2010 IEEE 83. DQWRTD MOSFET for leakage reduction and low power application Kamal Kishore Jha and Anurag Srivastava DATICS-Future Tech 2010’ IEEE Conference at South Korea.link 978-1-4244-6949-9/10/$26.00 ©2010 IEEE 84. An optimization of semantic image analysis using genetic algorithm approach coupled with ontologies Anush Ramani, Baby Ramya Vadlamudi, Chandana M, Sireesha Lanka, Shashikala Tapaswi and Anurag Srivastava Int. conf. on Digital Image Processing, (ICDIP-09) Thailand, 2009 85. Wide output swing inverter fed modified regulated cascade amplifier for analog and mixed signal applications Prateek Bajpai , Anurag Srivastava, S. S,. Rajput and G. K. Sharma Int Conf TANCON, 2009 86. A Non-Recursive Approach for FP-tree based Frequent Pattern Generation Shalini Jalan, Anurag Srivastava and G. K. Sharma Int .Conf. SCOReD 2009, Malaysia 87. Performance and Language Compatibility in Software Pattern detection Vikas Tripathi, T. Sai Guru Mahesh and Anurag Srivastava IEEE International Advance Computing Conference, Patiala, 1800-04, 2009 88. A 0.55-4.3 GHz Low Power and High Swing CMOS Voltage Controlled Ring Oscillator for RF applications Renuraj Garg, Anurag Srivastava and Manisha Pattannaik Int. J. Info. & Com.. Tech. 2, 99-102 (2009) 89. Pressure Induced Phase Transitions in Ga1-xInxP: Theory Anurag Srivastava and R. K. Singh Phase Transitions 77(4) 397-403 (2004) 90. High Pressure Phase Transitions in Semimagnetic Semiconductors: Pb1-xMnxS Anurag Srivastava, R. K. Singh, B. Johansson and R. Ahuja Physica Status Solidi(b) 237, 498 (2003) 91. Investigation of Pressure Induced Phase Transitions in Sn1-xMnxTe R. K. Singh and Anurag Srivastava Phase Transitions 76, 197 (2003) 92. Semi magnetic Semiconductor under High Pressure: Phase Transitions from B1-B2 observed under TBP approach Anurag Srivastava, R. K. Singh, R. Ahuja and B.Johansson Sci. Technol. of High Pressure 2, 830 (2000). 93. High Pressure Phase Transitions and Elastic Behavior of Semimagnetic Semiconductor Pb1-xMnxTe R. K. Singh and Anurag Srivastava Materials Science Forum, 236, 253-256, (1996).


Researchgroup, Institute, University, School, Company name

Advanced Materials Research Group, CNT Lab, ABV-IIITM, Gwalior


Researchgroup, Institute, Company, University, School webpage

http://tiiciiitm.com/profanurag


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