Spray‑Pyrolyzed Mo‑ and Cr‑Doped WO3 Thin Films
Andreea Popescu1,2, Ioan Valentin Tudose3,4, Octavian Narcis Ionescu1, Cosmin Romanitan1, Oana Brincoveanu1, Cristina Pachiu1, Raluca Gavrila1, Dumitru Manica1, Florian Pistritu1, Paul Schiopu2, Mirela Petruta Suchea1,3*, Emmanouel Koudoumas1*,3
1 National Institute for Research and Development in Microtechnologies - IMT Bucharest, 126A, Erou Iancu Nicolae Street, 077190, Voluntari-Bucharest, ROMANIA;
2 Doctoral School of Electronics, Telecommunications and Information Technology, National University of Science and Technology POLITEHNICA Bucharest, 061071, Bucharest, Romania;
3 Center of Materials Technology and Photonics, School of Engineering, Hellenic Mediterranean University, 71410 Heraklion, Crete, Greece;
4 Chemistry Department, University of Crete, Heraklion, Greece;
Abstract
Tungsten trioxide (WO3) is a promising n-type semiconductor with potential applications in gas sensing and its properties can be effectively tuned through controlled doping. In this study, thin films of Mo doped and Cr doped WO3 were deposited on indium tin oxide (ITO) coated glass substrates by spray pyrolysis at various dopant concentrations, enabling a systematic investigation of dopant‑induced modifications. A range of dopant concentrations was explored in order to understand how each dopant influences the structural and morphological properties of the resulting films. The films were characterized via X-ray diffraction (XRD), Scanning electron microscopy (SEM), Atomic Force Microscopy (AFM) and UV-vis spectroscopy. The results provide a clearer understanding of how Mo and Cr influence WO₃ film growth and microstructural quality, offering valuable insight for optimizing material performance in gas sensing devices designed to detect hazardous gases such as NO2 and NH3.
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