Synthesis and Applications of 2D-Graphitic Carbon Nitride for Optoelectronics
Parveen Ansari1*, Kamal Kumar Kushwah1, Hussain Jeevakhan2
JABALPUR ENGINEERING COLLEGE, JABALPUR, MADHYA PRADESH, INDIA
Abstract:
A polymeric semiconducting material similar to graphite, 2-dimensional Graphitic Carbon Nitride (g-C3N4), has special optical and electrical characteristics because of its graphene-like structure. Because of its exceptional chemical and thermal durability (up to 600̊ C in air), it can operate in both liquid and gaseous environments and at high temperatures. They are a promising option for electrode-modifying interface layers for a variety of optoelectronic devices due to their attractive electronic structure, which is that of a medium, direct band gap semiconductor with a band gap of 2.7 eV and conduction and valance bands located at -1.1 eV and 1.6 eV, respectively, compared to normal hydrogen electrodes. This study focused on creating nanostructured g-C3N4 using a thermal condensation process. Thorough examinations of the produced materials' optical and structural characteristics show that g-C3N4 nanosheets have formed and that the nanostructures' capacity to collect charges is improved over that of the as-made material. Specifically, the generated g-C3N4 nanostructures will enhance the performance of organic solar cells and other optoelectronic devices.
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