Al, Cr, La, Fe, and Sm Dopants Impact on the Band Gap of ZnO Thin Films

Dumitru Manica1, Marina Manica1, Ioan Valentin Tudose2,3, Petronela Pascariu4, Cosmin Romanitan1, Marian Popescu1, Cristina Pachiu1 and Mirela Petruta Suchea1,2*

1 National Institute for Research and Development in Microtechnologies - IMT Bucharest, 126A, Erou Iancu Nicolae Street, 077190, Voluntari-Bucharest, ROMANIA;
2 Center of Materials Technology and Photonics, School of Engineering, Hellenic Mediterranean University, 71410 Heraklion, Crete, Greece;
3 Chemistry Department, University of Crete, Heraklion, Greece;
4”Petru Poni” Institute of Macromolecular Chemistry, Aleea Grigore Ghica Voda, 41A, Iaşi 700487, Romania




This study investigates the influence of dopant elements (Al, Cr, La, Fe, Sm) on the optical properties of ZnO thin films using ultraviolet-visible (UV-Vis) spectroscopy. The bandgap energy, a crucial parameter for optoelectronic applications, is determined for each doped sample. The analysis focuses on the relationship between the dopant type and the observed shift in the absorption edge, which is directly correlated to the band gap. The results are expected to reveal how these dopants influence the electronic structure of ZnO, leading to potential band gap tailoring for specific device functionalities. This study aims to provide valuable insights into the bandgap engineering of ZnO through controlled doping with different elements. The results will contribute to the development of novel ZnO-based materials with optimised optoelectronic properties for applications in optoelectronic devices.

Keywords: ZnO; UV-Vis spectroscopy; Bandgap; Doping; Optoelectronics.

Acknowledgments: IMT’s contribution was partially supported by the Romanian Ministry of Research, Innovation and Digitalisation through the μNanoEl, Cod: 23 07 core Programme and partially supported by PNRR/2022/C9/MCID/I8 CF23/14 11 2022 contract 760101/23.05.2023 financed by the Ministry of Research, Innovation and Digitalization in “Development of a program to attract highly specialized human resources from abroad in research, development, and innovation activities” within the – PNRR-IIIC9-2022 - I8 PNRR/2022/Component 9/investment 8.

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