A highly efficient performance of C3N4/In2O3/BiVO4 photoelectrode as anti-corrosion system of Metals

Ahmed Helal1,2*, S M El-Sheikh1, Jianqiang Yu2, Alaa I. Eid1, S A El-hakam3, S E Samra3,

1- Nanostructured Materials and Nanotechnology Division, Central Metallurgical Research and
Development. Institute (CMRDI), P. O. 87 Helwan, Cairo 11421, Egypt.
2- Institute of Green Chemistry & Industrial Catalysis, School of Chemistry and Chemical Engineering,
Qingdao University, Qingdao 266071, China.
3- Department of Chemistry, Faculty of Science, Mansoura University, Mansoura, Egypt.

Abstract: Photocathodic protection considered one of the environment-friendly techniques for metals anticorrosion. In this technology, n-type semiconductor photoanode provides photogenerated electrons to reparation the lost electrons from metals. To date, great efforts have been devoted to develop a novel n-type semiconductors and advanced modification method to improve the performance of photocathodic protection of metals. Herein, g-C3N4/In2O3/BiVO4 three systems n-type composite was synthesized through a facile and novel method. This composite shows an enhancement in photo-generated electrons due to building a hole inversion layer between the BiVO4/In2O3 interface to enhance its photoelectrochemical efficiency. Moreover, the presence of g-C3N4 was provided extra cathodic protection during light off due to work as an electrons confinement agent.

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