Finite Element Method Modeling of Quantum Confinement in InP Nanowire
R. Dash1,*, S. Jena2
1 College of Engineering and Technology(Autonomous), Ghatikia, Bhubaneswar- 751029, INDIA
2 Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, Mumbai - 400085, INDIA
* Corresponding author
Indium phosphide (InP) is a potential binary semiconductor for high frequency and high power optoelectronics due to the superior electron velocity with respect to the more common semiconductors such as silicon and gallium arsenide. This paper presents Finite element method modelling of quantum confinement in InP Nanowire to find electron density distribution and the confining potential profile. The calculation is based on self-consistent Schrödinger Poisson theory.