UCLA researcher have managed to make major improves in MRAM memory by electric voltage instead of a flowing electric current (which is used in STT-MRAM). They call the new memory MeRAM (Magnetoelectric Random Access Memory). The researchers say that MeRAM combines extraordinary low energy with very high density, high-speed reading and writing times, and non-volatility.
MeRAM could be 10 to 1,000 times more energy-efficient than STT-MRAM. It's also five times as dense (more bits stored in the same physical area). This should hopefully make MeRAM cheaper, too: