Toshiba report STT-MRAM advances, expects gigabit chips within 3-4 years, to be cost competitive to DRAM

Toshiba says that their newly developed perpendicular magnetization-type magnetic tunnel junction (MTJ) device has excellent properties - and it can be a basic element towards a gigabit STT-MRAM device. The company says that these 'research results' are encouraging and they will now shift to the development of products. Commercialization of gigabit STT-MRAM is expected within 3 to 4 years.

Toshiba aim at a process size one generation older than that of DRAM and a cell area of 6F2. Production cost will be the same as DRAM (in theory, anyway).

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Tags: mram


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