Toshiba report STT-MRAM advances, expects gigabit chips within 3-4 years, to be cost competitive to DRAM

Toshiba says that their newly developed perpendicular magnetization-type magnetic tunnel junction (MTJ) device has excellent properties - and it can be a basic element towards a gigabit STT-MRAM device. The company says that these 'research results' are encouraging and they will now shift to the development of products. Commercialization of gigabit STT-MRAM is expected within 3 to 4 years.

Toshiba aim at a process size one generation older than that of DRAM and a cell area of 6F2. Production cost will be the same as DRAM (in theory, anyway).

http://www.mram-info.com/toshiba-report-stt-mram-advances-expects-g...

Views: 30

Tags: mram

Comment

You need to be a member of The International NanoScience Community to add comments!

Join The International NanoScience Community

Next partner events of TINC

We are Media Partner of:

Welcome - about us

Welcome! Nanopaprika was cooked up by Hungarian chemistry PhD student in 2007. The main idea was to create something more personal than the other nano networks already on the Internet. Community is open to everyone from post-doctorial researchers and professors to students everywhere.

There is only one important assumption: you have to be interested in nano!

Nanopaprika is always looking for new partners, if you have any idea, contact me at editor@nanopaprika.eu

Dr. András Paszternák, founder of Nanopaprika

Publications by A. Paszternák:

The potential use of cellophane test strips for the quick determination of food colours

pH and CO2 Sensing by Curcumin-Coloured Cellophane Test Strip

Polymeric Honeycombs Decorated by Nickel Nanoparticles

Directed Deposition of Nickel Nanoparticles Using Self-Assembled Organic Template,

Organometallic deposition of ultrasmooth nanoscale Ni film,

Zigzag-shaped nickel nanowires via organometallic template-free route

Surface analytical characterization of passive iron surface modified by alkyl-phosphonic acid layers

Atomic Force Microscopy Studies of Alkyl-Phosphonate SAMs on Mica

Amorphous iron formation due to low energy heavy ion implantation in evaporated 57Fe thin films

Surface modification of passive iron by alkylphosphonic acid layers

Formation and structure of alkylphosphonic acid layers on passive iron

Structure of the nonionic surfactant triethoxy monooctylether C8E3 adsorbed at the free water surface, as seen from surface tension measurements and Monte Carlo simulations