Imec performs world-leading research in nano-electronics. Imec leverages its scientific knowledge with the innovative power of its global partnerships in ICT, healthcare and energy. Imec delivers industry-relevant technology solutions. In a unique high-tech environment, its international top talent is committed to providing the building blocks for a better life in a sustainable society. Imec is headquartered in Leuven (Belgium) and has offices in the Netherlands, US, Taiwan, China, India and Japan. Its staff of more than 2,080 people includes over 750 industrial residents, guest researchers and scholarships.
Description
Job description
To improve performance, dimensional scaling has consistently played a crucial role, which has led to faster and more power efficient devices. At present, the more conventional memory technologies, like SRAM, DRAM, and Flash, are running towards fundamental scaling limits, such that more advanced technologies will need to be developed. One of the more promising alternatives today is Spin Torque Transfer Magnetic Random Access Memory (STT-MRAM) for which imec has recently started a new and exciting program. Using state of the art equipment in its 300m
m production line, imec is determined to set new boundaries for future memory technologies.
The core element of STT-MRAM is the Magnetic Tunnel Junction (MTJ), consisting of two ferromagnets separated by a thin insulator. Using spin polarized current, the magnetization of one of the ferromagnets can be switched, changing the electron tunnel resistance. Today, the complex multilayer MTJ stacks are being deposited by the most advanced PVD techniques, where control at the atomic level is of the utmost importance to enhance the device characteristics.
As a researcher you will actively contribute to the development and optimization of the MTJ stacks starting from the definition of the experiment, through the deposition of the layers, down to the characterization of the MTJ properties. You will closely interact with the integration engineers to bring these layers to a fully functional integrated device level.
Profile
You have a PhD degree in Physics, Materials Science or Engineering.
You are a professional with a strong background in STT-MRAM, preferably in an industrial environment.
You are a hands-on person with solid knowledge of the deposition and characterization of MTJs.
You can quickly change the focus of your research and pursue opportunities.
You have excellent reporting skills and are able to present scientific results (publications, conferences, seminars).
You can easily integrate in an international team.
Good English communication skills are required.
02/09/2014
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