Closing Date: Monday 10 November 2014

Major Duties:

1. Experimental work on material characterisation of GaN nanowires and vertical device architectures based on GaN nanowires.
   This will involve liaising closely with our project partners in the Tyndall National Institute/Cork Institute of Technology (RoI) and IIT (USA).
2. Structural characterisation of GaN nanostructures using mainly electron microscopy techniques (SEM, TEM/STEM & FIB).
3. In addition, apply other standard characterisation techniques such as XRD and AFM if considered neccesary. This especially relates to analysis of dislcoations and other defects.
   The ultimate task of the project is the characterization of the functional devices (fabricated by Tyndall and tested by IIT) to study the effect of working conditions on the devices. This will involve failure mechanism analysis.
4. Carry out sample preparation by conventional mechanical polishing and FIB.
5. Modelling of diffraction and TEM/STEM data.
6. Preparation and presentation of results in video conferencing with project partners and at national/international conferences and workshops as required or as opportunity arises.
7. Contribute to writing of papers for publication and of reports as necessary.
8. Identify further funding opportunities to consolidate the group’s research and prepare outline proposals.
9. Assist with project-related outreach activities as required.

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