The Department of Materials Science and Metallurgy, University of Cambridge, requires a Post-Doctoral Research Associate (PDRA), to characterise using advanced electron microscopy techniques, GaN-based materials and devices for power electronic device structures grown by another post-doctoral worker.

This post-doctoral position is funded by the EPSRC. The project is part of a major Programme Grant from the EPSRC to develop silicon compatible GaN power electronics. A number of different UK universities are involved and the project is closely linked to a number of industries. The important role of Cambridge is to supply GaN based power electronic device structures grown on 150 mm diameter Si wafers to the other partners. The person appointed should have a PhD in a relevant field and expertise in advanced electron microscope techniques including atomic resolution STEM, HAADF, HREM, EELS, EDX, diffraction contrast, etc and should be able to work both independently and as part of a team. Expertise in X-ray diffraction, AFM, etc, would be an advantage. The Department has a wide range of electron microscopes including an aberration-corrected FEI Titan with a monochromator.

Closing date: 31 March 2015

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