In Micro/nanoelectronics “cold” technolgies are more and more invistigated to promote monolithic integration (circuit on circuit or MEMS-sur-circuit). Among the possible “cold” techniques, laser annealing is seen as an attractive technique not only for dopants activation but also for thin semiconductor layers recrystallization (Si, Ge, etc.) which may serve as active layer. In the framework of the Advanced Substrate Laboratory and on the basis of a CEA filed patent, the applicant will develop a laser recrystallization process on silicon and / or germanium for applications that can cover Photovolatic, Display and hybrid MEMS/ Microelectronics. A laser equipment owned by the laboratory will be used, as well as various techniques of characterization offered by LETI infrastructures. The developpement of such a cold process opens the route for the implementation of a new generation of advanced substrates, unique in terms of nature (polymers, glass, ceramics, …) in terms of configuration (chip, tape, …) and in terms of geometry (high surface area curves, …).

This position is open until it is filled.

Département: Département Composants Silicium (LETI)
Laboratory: Laboratoire de Substrats Avancés
Start Date: 01-01-2015
ECA Code: PsD-DRT-15-0016
Contact: Marc.Baaden@ibpc.fr