Within this Phd subject we will study the role of structure and oxygen in the switching process for different types of specimens by analysing the devices in situ in the TEM. Techniques such as EDS (Energy dispersive X-Ray Spectroscopy) or EELS (Electron Energy Loss Spectroscopy) will be developed for the measurement of oxygen concentration (atoms) and electron holography for the measurement of the changes in electrostatic potential caused by the movement of the oxygen. Conventional techniques such as aberration-corrected high-resolution STEM imaging will be available for the assessment of the changes in device structure.
This work will be at the leading edge of in situ electron microscopy and will develop methods to routinely measure the changes in structure, composition and fields in nanoelectronic devices. We will combine the expertise that is available in the different laboratories for materials deposition, electrical testing, modelling and advanced in situ characterisation to provide accurate information about how complex memory devices work at an atomic scale.
We are currently looking for a PhD-level researcher who will join a team working towards this objective using off-axis electron holography, STEM EELS and state-of-the-art specimen preparation techniques. We are looking for a dynamic, self-starter who is interested in this subject. The candidate must be happy to work in a team environment. The candidate must also possess a Masters degree in a relevant subject. A background in characterisation would be advantageous.
Contact:
David Cooper
CEA/LETI, Grenoble, France
Tel: +33 (0)4 38 78 19 27
Email: david.cooper@cea.fr
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