Effect of Zinc Oxide Films on Si Substrates Growth by Microwave Plasma Jet Sintering System

Authors: Chun Hsi Su, Chia Min Huang

Abstract: Microwave plasma techniques offered many advantages over conventional fabricating methods. However, few studies have used microwave plasma energy to sinter traditional ceramics. Thus, the aim of this work is microwave plasma Jet sintering system (MPJSS) and simulate analyze the electric field of ZnO films on Si (100) substrates. Ansoft HFSS consists of MPJSS modules for the calculation of ZnO films electromagnetic field. Sinter of ZnO films occurs at approximately N2 with a 10 sccm gas flow rate for a process pressure of 35 Torr and several power of 300W, 600W, 900W and 1200W applied power. Optical emission spectroscopic (OES) studies of N2 microwave plasmas, X-ray diffraction (XRD), Micro-Raman, and FESEM spectrometry were used to characterize the produced ZnO films. The results of XRD and Micro-Raman showed that the synthesized ZnO films had a high crystalline wurzite structure. The Zn2SiO4 peaks reveal an increase of the crystals dimensions with the increase of the E-field. Intensity of diffraction peak of ZnO films increases with increasing microwave powers in MPJSS.

Direct link: http://www.scientific.net/JNanoR.22.1