"Hot Nanotechnology Papers": Analytical Modeling of Drain–Source Current Anomalies in ssDNA-SET—A Low Power Nano Device for Future Electronics Applications

Authors: Vishal Sharma & Vipul Saraf
Institute: Govt. G G M Science College Jammu, Jammu & Kashmir, India
 
Abstract:
In this research paper we have studied mathematically the Drain Source characteristics of single strand DNA(ssDNA)-Single Electron tunneling Transistor (SET) and the effect of random background charge on these characteristics using the "Orthodox" theory of single electron tunneling as applicable in ssDNA-SET. The equations are simulated using 'C' language and results are plotted graphically using Microcal Origin software and it has been observed that Background charge simply sifts the Coulomb blockade regime and thus affect the performance of ssDNA-SET.
 
Link of the paper:
 

http://www.ingentaconnect.com/content/asp/jctn/2013/00000010/000000...

Views: 78

Comment

You need to be a member of The International NanoScience Community to add comments!

Join The International NanoScience Community


Full member
Comment by Vishal Sharma on March 10, 2014 at 5:37pm

please like my research paper


Full member
Comment by Vishal Sharma on March 9, 2014 at 6:44pm

please like my research paper

Welcome - about us

Welcome! Nanopaprika was cooked up by Hungarian chemistry PhD student in 2007. The main idea was to create something more personal than the other nano networks already on the Internet. Community is open to everyone from post-doctorial researchers and professors to students everywhere.

There is only one important assumption: you have to be interested in nano!

Nanopaprika is always looking for new partners, if you have any idea, contact me at editor@nanopaprika.eu

Dr. András Paszternák, founder of Nanopaprika

Partner network:

Next partner events of TINC

We are Media Partner of:

Badge

Loading…

© 2019   Created by András Paszternák, PhD (founder).   Powered by

Badges  |  Report an Issue  |  Terms of Service