"Hot Nanotechnology Papers": Analytical Modeling of Drain–Source Current Anomalies in ssDNA-SET—A Low Power Nano Device for Future Electronics Applications

Authors: Vishal Sharma & Vipul Saraf
Institute: Govt. G G M Science College Jammu, Jammu & Kashmir, India
In this research paper we have studied mathematically the Drain Source characteristics of single strand DNA(ssDNA)-Single Electron tunneling Transistor (SET) and the effect of random background charge on these characteristics using the "Orthodox" theory of single electron tunneling as applicable in ssDNA-SET. The equations are simulated using 'C' language and results are plotted graphically using Microcal Origin software and it has been observed that Background charge simply sifts the Coulomb blockade regime and thus affect the performance of ssDNA-SET.
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Comment by Vishal Sharma on March 10, 2014 at 5:37pm

please like my research paper

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Comment by Vishal Sharma on March 9, 2014 at 6:44pm

please like my research paper

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