All Blog Posts Tagged 'mram' (12)


Full member
20 chipmakers from Japan and US to co-develop MRAM in hopes to replace DRAM within 3 years

According to Nikkei, over 20 Japanese and US companies (including TEL, Hitachi, Rensas and Micron) have teamed up to develop MRAM technologies, in particular a new mass production method. They plan to start development in February 2014, and continue to seek more companies from the US and Europe to join. The aim is to complete materials and processes development by 2017 and start mass production by 2018.



This is an exciting development. Hopefully the companies will actually launch…

Continue

Added by TINC on November 25, 2013 at 10:55pm — No Comments


Full member
UCLA's new MeRAM technology is 10 to 1000 times more energy efficient than STT-RAM, give times as dense

UCLA researcher have managed to make major improves in MRAM memory by electric voltage instead of a flowing electric current (which is used in STT-MRAM). They call the new memory MeRAM (Magnetoelectric Random Access Memory). The researchers say that MeRAM combines extraordinary low energy with very high density, high-speed reading and writing times, and non-volatility.



MeRAM could be 10 to 1,000 times more energy-efficient than STT-MRAM. It's also five times as dense (more bits…

Continue

Added by TINC on December 16, 2012 at 7:52pm — No Comments


Full member
Spingate's new MRAM technology to enable 1Tbit/in2, finally compete with HDD, DRAM and Flash?

Spingate announced that they invented a multi-bit Spin-RAM, which can store two bits per MTJ. It uses magnetic materials with perpendicular anisotropy and has a cell size of 4F2, which is the smallest currently reported in the industry. This kind of memory can provide a density of about 160 Gbits/in2 (0.257 Gbit/mm2) at 45 nm. Scaling it to 10 nm will enable 1 Tbits/in2.



If Spingate is successful in commercializing this technology, it could enable an MRAM device that can compete…

Continue

Added by TINC on November 23, 2012 at 8:11pm — No Comments


Full member
Everspin to start producing ST-MRAM chips soon at 64Mbit

We just got word that Everspin will soon announce their first ST-MRAM product. From what we hear, the 64-Mbit chip is already sampling and clients are already evaluation it. Everspin is targeting the enterprise SSD market. Everspin's ST-MRAM chips will feature non-volatility, low latency and increased reliability.



If this is true, this is a very exciting moment for the MRAM industry, as many believe that Spin-Torque (ST-MRAM) technology will finally enable MRAM to reach high…

Continue

Added by TINC on November 13, 2012 at 7:00pm — No Comments


Full member
Crocus promises MRAM chips in 2012

Crocus is developing MRAM memory and Memory-Logic chips. We interviewed their marketing officer, and he promises MRAM chips in 2012. He also says that the Russian plant will become online in 2013, and gives his views on the MRAM industry and market:

http://www.mram-info.com/interview-barry-hoberman-crocus-chief-marketing-officer

Added by TINC on January 8, 2012 at 6:05pm — No Comments


Full member
Everspin to launch STT-MRAM in 2012, prepares design-in tools support

Everspin is gearing up to introduce their upcoming STT-MRAM products in 2012, and the company announced that they have partnered with Cadence to provide ;memory model verification IP for these products. The new memory models are already available as part of the Cadence Verification IP Catalog. Everspin says they are working with several partners to ensure design-in tools are available as well.



STT-MRAM requires less current to write info into the memory cell, which leads to higher… Continue

Added by TINC on October 4, 2011 at 8:16pm — No Comments


Full member
Toshiba to use MRAM as cache for HDD and NAND

It seems that Toshiba plans to use MRAM as cache for both NAND and HDDs devices.
Toshiba hasn't given up on the idea of having a full MRAM memory device - replacing HDD/NAND/DRAM altogether, but using it as a cache can be a step towards this goal:

http://www.mram-info.com/toshiba-use-mram-cache-hdd-and-nand

Added by TINC on August 17, 2011 at 8:26pm — No Comments


Full member
Toshiba and Hynix to co-develop and produce MRAM chips


Toshiba and Hynix announced an agreement to jointly develop MRAM products. Once the development is complete, the companies intend to establish an MRAM production plant together. We believe the companies intend to develop STT-MRAM technology:

http://www.mram-info.com/toshiba-and-hynix-co-develop-and-produce-mram-products

Added by TINC on July 13, 2011 at 8:49pm — No Comments


Full member
Toshiba report STT-MRAM advances, expects gigabit chips within 3-4 years, to be cost competitive to DRAM

Toshiba says that their newly developed perpendicular magnetization-type magnetic tunnel junction (MTJ) device has excellent properties - and it can be a basic element towards a gigabit STT-MRAM device. The company says that these 'research results' are encouraging and they will now shift to the development of products. Commercialization of gigabit STT-MRAM is expected within 3 to 4 years.



Toshiba aim at a process size one generation older than that of DRAM and a cell area of 6F2.… Continue

Added by TINC on July 6, 2011 at 7:00pm — No Comments


Full member
Universal memory at least? Crocus developed NAND-like MRAM, to replace replace SRAM, DRAM, NAND, NOR and OTP

Crocus developed a new technology called Magnetic-Logic-Unit (MLU), which is an evolution of their Thermally Assisted Switching (TAS) MRAM technology.



MLU can be configured in several ways, and so could potentially replace SRAM, DRAM, NAND, NOR and OTP. And all those capabilities are manufactured using the same simple wafter process - with different design architecture.



More info here:…



Continue

Added by TINC on June 24, 2011 at 9:03am — No Comments


Full member
Spingate advances new pS-MRAM technology, working on a 4Gbit chip design

Spingate is a US company working on magnetic memory (MRAM) designs and IP. The company says they are advancing their new pS-MRAM technology (based on spin induced switching and perpendicular magnetic materials). According to Spingate this new technology will be competitive in performance and price/bit with all existing memory technologies including DRAM and NAND flash. The company is already working on a 4Gbit chip design.…



Continue

Added by TINC on March 31, 2011 at 8:04pm — No Comments


Full member
BMW uses MRAM in their new super racing bike, the S-1000RR

BMW revealed today that they are using a 4Mb MRAM chip (made by Everspin) in their S-1000RR super bike. BMW is using the memory chip in their Motorrad Motorsport engine control unit (ECU) called RSM5, storing important calibration data that controls the motorcycle during a race. The MRAM chip stores adjustable engine parameters such as data related to a racing bike’s fuel injection, ignition, braking and acceleration, and is optimized before each race - with different parameters according to… Continue

Added by TINC on March 16, 2011 at 9:25pm — No Comments

Monthly Archives

2015

2014

2013

2012

2011

2010

2009

2008

Next partner events of TINC

We are Media Partner of:

Welcome - about us

Welcome! Nanopaprika was cooked up by Hungarian chemistry PhD student in 2007. The main idea was to create something more personal than the other nano networks already on the Internet. Community is open to everyone from post-doctorial researchers and professors to students everywhere.

There is only one important assumption: you have to be interested in nano!

Nanopaprika is always looking for new partners, if you have any idea, contact me at editor@nanopaprika.eu

Dr. András Paszternák, founder of Nanopaprika

Publications by A. Paszternák:

The potential use of cellophane test strips for the quick determination of food colours

pH and CO2 Sensing by Curcumin-Coloured Cellophane Test Strip

Polymeric Honeycombs Decorated by Nickel Nanoparticles

Directed Deposition of Nickel Nanoparticles Using Self-Assembled Organic Template,

Organometallic deposition of ultrasmooth nanoscale Ni film,

Zigzag-shaped nickel nanowires via organometallic template-free route

Surface analytical characterization of passive iron surface modified by alkyl-phosphonic acid layers

Atomic Force Microscopy Studies of Alkyl-Phosphonate SAMs on Mica

Amorphous iron formation due to low energy heavy ion implantation in evaporated 57Fe thin films

Surface modification of passive iron by alkylphosphonic acid layers

Formation and structure of alkylphosphonic acid layers on passive iron

Structure of the nonionic surfactant triethoxy monooctylether C8E3 adsorbed at the free water surface, as seen from surface tension measurements and Monte Carlo simulations