Metal Oxide Semiconductors have poor selectivity in Gas sensing mechanism. What is the main reason for such property? How can we improve the selectivity?

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I think you can improve this ability in some metal oxides with change in their crystalline structure. i.e. plate-shaped matal oxide semicondutors have better selectivity toward the gases as a sensor.

But how we can change the crystalline structure in palette shape, i think it remains same structure in palette shape or thin film.
You can prepare the plate-shape nano metal oxides by hydrothermal and solvothermal methods using a suitable control sizer or capping agents.

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