Authors: Toshio Takeuchi, Minoru Kondo, Miki Fujuta, Atsushi Kawaharazuka, Yoshiji Horikoshi

Abstract: Amorphous Si/SiO2 quantum wells have been obtained at room temperature with atomic precision using magnetron sputtering. The Si/SiO2 layer structure induces the higher optical transmittance at the visible wavelength region with increasing layer numbers. The tentative absorption coefficients are evaluated for integrated Si thicknesses. The absorption edge energy dependency on Si layer thickness E0 = 1.61 + 0.75d-2 is in accordance with effective mass theory for thicknesses 0.5 < d < 6nm. Quantum confinement effects of the Si/SiO2 nanostructure layer are confirmed from optical transmittance and reflectance spectra.

Direct link:http://www.scientific.net/JNanoR.26.59