New discovery paves the way towards Graphene based nonvolatile memory

Researchers from the A*STAR Institute of Materials Research and Engineering and the National University of Singapore have developed an improved design for a Graphene based field-effect transistor (FET). The new device includes an additional silicon dioxide (SiO2) dielectric gate below the graphene layer. This allows for simplified bit writing by providing an additional background source of charge carriers and paves the way towards nonvolatile Graphene-based memory

http://www.mram-info.com/new-discovery-paves-way-towards-graphene-b...

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Publications by A. Paszternák:

The potential use of cellophane test strips for the quick determination of food colours

pH and CO2 Sensing by Curcumin-Coloured Cellophane Test Strip

Polymeric Honeycombs Decorated by Nickel Nanoparticles

Directed Deposition of Nickel Nanoparticles Using Self-Assembled Organic Template,

Organometallic deposition of ultrasmooth nanoscale Ni film,

Zigzag-shaped nickel nanowires via organometallic template-free route

Surface analytical characterization of passive iron surface modified by alkyl-phosphonic acid layers

Atomic Force Microscopy Studies of Alkyl-Phosphonate SAMs on Mica

Amorphous iron formation due to low energy heavy ion implantation in evaporated 57Fe thin films

Surface modification of passive iron by alkylphosphonic acid layers

Formation and structure of alkylphosphonic acid layers on passive iron

Structure of the nonionic surfactant triethoxy monooctylether C8E3 adsorbed at the free water surface, as seen from surface tension measurements and Monte Carlo simulations