Nantech Journal Club: Correlation between optical, morphological and compositional properties of Aluminum Nitride thin films by Pulsed Laser Deposition

Correlation between optical, morphological and compositional properties of Aluminum Nitride thin films by Pulsed Laser Deposition

PEREZ TABORDA, J. ; RIASCOS, H. ; VERA, L.

AlN thin films were grown in a N2 atmosphere onto a Si/Si3N4 substrate by pulsed laser ablation. We have varied the substrate temperature for the thin film growth, using X-ray Reflectometry (XRR) analysis, we have characterized the thickness and density of the thin layer and the interface roughness from the X-ray reflectivity profiles. Experimental data showed that the root-mean-square roughness was in the range of 0.3 nm. X-ray photoelectron spectroscopy (XPS) was employed to characterize the chemical composition of the films. These measurements detected carbon and oxygen contamination at the surface. In the high-resolution X-ray photoelectron spectroscopy Al2p data, binding energies for Al-N and Al-O species were identified but no Al-Al species were present. In the N1s data, N-O species were not detected, but chemically bonded O was present in the films as Al-O species. Furthermore the value of optical energy gap, Eg was about 5.3 (± 0.1) eV. The composition varied with process conditions, and the nitrogen content decreased in AlN films processed above 500°C.

Sensors Journal, IEEE, Issue: 99, DOI:10.1109/JSEN.2015.2466467

 

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