Paper shared by Pandeeswari

High sensing response of β-Ga₂O₃ thin film towards ammonia vapours: Influencing

factors at room temperature

R. Pandeeswari and B.G. Jeyaprakash

SASTRA University

The gallium oxide (β-Ga₂O₃) thin films were deposited onto a quartz substrate using spray pyrolysis technique with Gallium acetylacetonate as precursor salt. The X-ray diffraction pattern of the annealed film at 900 °C indicated the formation of monoclinic β-Ga₂O₃ phase with polycrystalline nature. Field emission scanning electron micrograph showed  nanocrystallites over the film surface. The ammonia sensing property of the film at room temperature (~30 °C) was studied by chemiresistive method. Influencing factors such as    vapour concentration, relative humidity and film thickness in ammonia sensing performance were studied and reported.