Highly transparent and flexible resistive memory made from silicon and graphene

Researchers from the Rice University have developed highly transparent (95%), flexible, nonvolatile resistive memory devices based on silicon oxide (SiOx) and graphene. This research began in 2008 when they discovered that silicon oxide itself can be a switch.

The researchers placed the SiOx and crossbar graphene terminals on flexible plastic to make the simple memory devices which can be stacked in 3D and made in multi-state architectures:


Views: 41

Tags: graphene


You need to be a member of The International NanoScience Community to add comments!

Join The International NanoScience Community

Welcome - about us

Welcome! Nanopaprika was cooked up by Hungarian chemistry PhD student in 2007. The main idea was to create something more personal than the other nano networks already on the Internet. Community is open to everyone from post-doctorial researchers and professors to students everywhere.

There is only one important assumption: you have to be interested in nano!

Nanopaprika is always looking for new partners, if you have any idea, contact me at editor@nanopaprika.eu

Dr. András Paszternák, founder of Nanopaprika

Next partner events of TINC

We are Media Partner of:

© 2015   Created by András Paszternák, PhD (founder).   Powered by

Badges  |  Report an Issue  |  Terms of Service