Postdoctoral research associate to join the research team of the project "3533 - NanoWireMemory" (Action ARISTEIA II of GSRT). A PhD in Micro/Nanoelectronics and a valid EU work permit are required. Prior experience in Si nanostructuring by e-beam lithography is desired.

Description

Τhe Institute of Nanoscience and Nanotechnology (INN) of NCSR "DEMOKRITOS" for the implementation of the research project "3533 - NanoWireMemory ", co-funded by the European Union (European Social Fund) and national funds in the frame of the Action ARISTEIA II of the Operational Program “Education and Long-life Learning” of NSRF 2007-2013, invites applications for postdoctoral research associate position.
The successful applicant will be involved in a multidisciplinary project aiming at the development of a new class of memory devices, which integrates the emerging device concept of 3-D Si Nanowire (NW) with advanced charge-trapping technology to realize memory cells beyond the 22nm node. We are looking for an experienced candidate to work on the design, fabrication and characterization of SiNW FETs with a focus on e-beam lithography assisted nanofabrication activities.
Successful candidate will hold a PhD and M.Sc. in Micro/Nanoelectronics with a background in Physics (bachelor level) and will have good knowledge of English.
Prior experience on: (1) Νanopatterning techniques assisted by e-beam lithography (Weighting Factor: 3.5/10), (2) device fabrication and electrical characterization (WF: 2.5/10), (3) Microelectronic-related clean-room processing techniques (WF: 2.5/10) and execution of research projects (WF: 1.5/10) is highly desired. Weighting factor will take into account (where it applies): the quality (Impact Factor) and number of scientific publications, number of conference presentations, the extent of knowledge and years of experience in the field, as well as the number of executed projects and the role of the candidate in these projects.
The finalists may be interviewed by the Evaluation Committee at INN of NCSRD ‘Demokritos” either in person or through electronic means.
A valid EU work permit will be required at hiring time. The successful candidate will sign a “contract for the provision of services”; Maximum duration: eight (3) months; Maximum gross monthly compensation will be 2450 €/month.
Signing of the contract will be possible only if the extension of the research project «NanoWireMemory» is approved by the General Secretariat for Research and Technology.
For further information please contact Dr. Pascal Normand (email: P.Normand@imel.demokritos.gr ).

Applications (accompanied by a full CV, list of publications) should be sent by email to p.normand@inn.demokritos.gr and by mail at “Special Account Secretariat, NCSR DEMOKRITOS, P.O. Box 60228, GR-15310 Aghia Paraskevi, Greece”, latest on Thursday 18 June 2015. IMPORTANT: All applications should mention the institute name (INN), the acronym of the project («NanoWireMemory»), the project number (E-11871), the contact person (Dr. Pascal Normand), the position title («Electron beam lithography») and the protocol number (015/2015-2497) of the present call.

18/06/2015