Objectives: DC and microwave characterization of test capacitors, and extraction of capacitance versus bias voltage to obtain information of surface doping profile. This extraction will benefit from the modelling involving a non uniform doping profile as well as a dynamic model of the capacitance taking into account parameters like bias voltage rate, micro-wave small signal frequency, temperature, free charge generation and dopant ionisation to reproduce closely characterization conditions. This study constitutes a first step towards the more complicated structure of a transistor.
Description
Tasks and methodology: • De-embedding techniques for quantitative nanoscale doping profiling. • Main aspects of nano-scale doping profiling (technology and test). Results: Measurements of absolute nanoscale doping profiling in semiconductors (10^14 – 10^20 at/cm3) Calibration standards for capacitors (1 aF – 10 fF) and doping with modelling of nanoscale semiconductor doping profiling Scanning Microwave Microscopy characterization of the doping profile
Benefits
one year contract
Additional Job Details
http://nanomicrowave.eu http://www.artov.imm.cnr.it
28/02/2014
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