Atomistic Simulation Of Gan Based Light Emitting Devices - Italy

In the framework of the FP7 project no. 318388 "NEWLED" GaN based Light Emitting Devices have to be simulated. A correlation

between the InGaN composition and fluctuation strength and their impact on IQE will be identified within this study. The modelling results will be employed for interpretation of the characterisation data and design of LED structures that would utilise advantageous properties of nano-structured semiconductors.

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Fellowship's Details
Career Stage
Experienced researcher or 4-10 yrs (Post-Doc)

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