Anisotropic charge transfer in 2D-conductors - Germany

The International Helmholtz Research School for Nanoelectronic Networks (IHRS NANONET) is an initiative of the Hemholtz-Zentrum Dresden - Rossendorf (HZDR) in a joint collaboration with the Technische Universität Dresden (TUD), Leibniz Institut für Polymerforschung Dresden e.V. (IPF), Fraunhofer Institute for Ceramics Technologies and Systems IKTS, and the Nanoelectronics Materials Laboratory (NaMLab) gGmbH. The research School offers an interdisciplinary research training program in the field of molecular electronics. The 3-year PhD programme includes independent research work in a project involving different divisions of science and engineering and a well-structured scientific curriculum providing for a comprehensive training in technical and professional skills. Further information can be found at www.ihrs-nanonet.de
A PhD position is now open within the IHRS NANONET at the Institute of Ion Beam Physics and Materials Research at the Hemholtz-Zentrum Dresden-Rossendorf (HZDR). The HZDR is a research centre with more than 1000 employees and a member of the Helmholtz Association. The scientific key aspects of the HZDR are in the field of matter, energy and health. The research is performed in eight scientific institutes. Further information can be found at http://www.hzdr.de/fwi

PhD project: Anisotropic charge transfer in 2D-conductors

Two-dimensional semiconductors, such as metal chalcogenide materials like MoS2, can be contacted on insulating surfaces using standard lithography. Transistor behavior of such devices has been shown recently, proving that the semiconducting properties of the 2 dimensional layers lead to novel possibilities for future electronic components. So far, most properties were isotropic, due to the underlying symmetry of the semiconductor. In this project, we want to investigate the influence of anisotropic, insulating substrates on the conductance properties of the 2d layers. In order to measure these properties, we propose to deposit the layers on rippled substrates, which can be created by ion irradiation of SiO2 substrates. Comparison with layers deposited on smooth substrates will identify the influence of the surface ripples. In further experiments, we will modify the 2d layer by controlled ion irradiation introducing single defects into the semiconducting layers and by putting!
  the stru
 ctures on thin SiO2 layers with conducting Si underneath for application of a gate voltage. Theoretical predictions show that in such structures localized metallic states can be expected, which can further be used for creating 1d metallic conductors. Such structures will then be used as idealized 1d contacts for nanoelectronic components.


Requirements:
The successful candidate will:
•       Hold (or be about to earn) a Master’s degree (or equivalent) in Physics, Chemistry, Materials Science or Electrical Engineering and have demonstrated an outstanding academic performance.
•       Have prior research experience and demonstrated potential and enthusiasm to conduct challenging research towards a PhD.
•       Have excellent team-working skills and be motivated to work in a highly interdisciplinary and collaborative environment.
•       Have very good oral and written English language skills (German language skills are not required).


Offer:
We offer an exciting research environment with an outstanding research infrastructure, and the participation in an international PhD programme providing for a comprehensive training in technical and professional skills. A fellowship of 1365,- EUR per month to cover living expenses in Germany will be offered for a period of three years.
Further details can be found in our website: www.ihrs-nanonet.de


How to apply:
Please visit our website (www.ihrs-nanonet.de) for further information and to access the online application platform. Applications sent by e-mail are not accepted.

The application deadline is 25 June 2014
Incomplete and post-deadline applications will be disregarded.

The IHRS NANONET is committed to an equal opportunity policy. Admission will be offered to qualified candidates without regard to race, gender, or disability.

Further information: www.ihrs-nanonet.de

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