TINC's Blog Posts Tagged 'mram' (11)

UCLA's new MeRAM technology is 10 to 1000 times more energy efficient than STT-RAM, give times as dense

UCLA researcher have managed to make major improves in MRAM memory by electric voltage instead of a flowing electric current (which is used in STT-MRAM). They call the new memory MeRAM (Magnetoelectric Random Access Memory). The researchers say that MeRAM combines extraordinary low energy with very high density, high-speed reading and writing times, and non-volatility.



MeRAM could be 10 to 1,000 times more energy-efficient than STT-MRAM. It's also five times as dense (more bits…

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Added by TINC on December 16, 2012 at 7:52pm — No Comments

Spingate's new MRAM technology to enable 1Tbit/in2, finally compete with HDD, DRAM and Flash?

Spingate announced that they invented a multi-bit Spin-RAM, which can store two bits per MTJ. It uses magnetic materials with perpendicular anisotropy and has a cell size of 4F2, which is the smallest currently reported in the industry. This kind of memory can provide a density of about 160 Gbits/in2 (0.257 Gbit/mm2) at 45 nm. Scaling it to 10 nm will enable 1 Tbits/in2.



If Spingate is successful in commercializing this technology, it could enable an MRAM device that can compete…

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Added by TINC on November 23, 2012 at 8:11pm — No Comments

Everspin to start producing ST-MRAM chips soon at 64Mbit

We just got word that Everspin will soon announce their first ST-MRAM product. From what we hear, the 64-Mbit chip is already sampling and clients are already evaluation it. Everspin is targeting the enterprise SSD market. Everspin's ST-MRAM chips will feature non-volatility, low latency and increased reliability.



If this is true, this is a very exciting moment for the MRAM industry, as many believe that Spin-Torque (ST-MRAM) technology will finally enable MRAM to reach high…

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Added by TINC on November 13, 2012 at 7:00pm — No Comments

Crocus promises MRAM chips in 2012

Crocus is developing MRAM memory and Memory-Logic chips. We interviewed their marketing officer, and he promises MRAM chips in 2012. He also says that the Russian plant will become online in 2013, and gives his views on the MRAM industry and market:

http://www.mram-info.com/interview-barry-hoberman-crocus-chief-marketing-officer

Added by TINC on January 8, 2012 at 6:05pm — No Comments

Everspin to launch STT-MRAM in 2012, prepares design-in tools support

Everspin is gearing up to introduce their upcoming STT-MRAM products in 2012, and the company announced that they have partnered with Cadence to provide ;memory model verification IP for these products. The new memory models are already available as part of the Cadence Verification IP Catalog. Everspin says they are working with several partners to ensure design-in tools are available as well.



STT-MRAM requires less current to write info into the memory cell, which leads to higher… Continue

Added by TINC on October 4, 2011 at 8:16pm — No Comments

Toshiba to use MRAM as cache for HDD and NAND

It seems that Toshiba plans to use MRAM as cache for both NAND and HDDs devices.
Toshiba hasn't given up on the idea of having a full MRAM memory device - replacing HDD/NAND/DRAM altogether, but using it as a cache can be a step towards this goal:

http://www.mram-info.com/toshiba-use-mram-cache-hdd-and-nand

Added by TINC on August 17, 2011 at 8:26pm — No Comments

Toshiba and Hynix to co-develop and produce MRAM chips


Toshiba and Hynix announced an agreement to jointly develop MRAM products. Once the development is complete, the companies intend to establish an MRAM production plant together. We believe the companies intend to develop STT-MRAM technology:

http://www.mram-info.com/toshiba-and-hynix-co-develop-and-produce-mram-products

Added by TINC on July 13, 2011 at 8:49pm — No Comments

Toshiba report STT-MRAM advances, expects gigabit chips within 3-4 years, to be cost competitive to DRAM

Toshiba says that their newly developed perpendicular magnetization-type magnetic tunnel junction (MTJ) device has excellent properties - and it can be a basic element towards a gigabit STT-MRAM device. The company says that these 'research results' are encouraging and they will now shift to the development of products. Commercialization of gigabit STT-MRAM is expected within 3 to 4 years.



Toshiba aim at a process size one generation older than that of DRAM and a cell area of 6F2.… Continue

Added by TINC on July 6, 2011 at 7:00pm — No Comments

Universal memory at least? Crocus developed NAND-like MRAM, to replace replace SRAM, DRAM, NAND, NOR and OTP

Crocus developed a new technology called Magnetic-Logic-Unit (MLU), which is an evolution of their Thermally Assisted Switching (TAS) MRAM technology.



MLU can be configured in several ways, and so could potentially replace SRAM, DRAM, NAND, NOR and OTP. And all those capabilities are manufactured using the same simple wafter process - with different design architecture.



More info here:…



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Added by TINC on June 24, 2011 at 9:03am — No Comments

Spingate advances new pS-MRAM technology, working on a 4Gbit chip design

Spingate is a US company working on magnetic memory (MRAM) designs and IP. The company says they are advancing their new pS-MRAM technology (based on spin induced switching and perpendicular magnetic materials). According to Spingate this new technology will be competitive in performance and price/bit with all existing memory technologies including DRAM and NAND flash. The company is already working on a 4Gbit chip design.…



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Added by TINC on March 31, 2011 at 8:04pm — No Comments

BMW uses MRAM in their new super racing bike, the S-1000RR

BMW revealed today that they are using a 4Mb MRAM chip (made by Everspin) in their S-1000RR super bike. BMW is using the memory chip in their Motorrad Motorsport engine control unit (ECU) called RSM5, storing important calibration data that controls the motorcycle during a race. The MRAM chip stores adjustable engine parameters such as data related to a racing bike’s fuel injection, ignition, braking and acceleration, and is optimized before each race - with different parameters according to… Continue

Added by TINC on March 16, 2011 at 9:25pm — No Comments

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