"Spicy world of NanoScience"
UCLA researcher have managed to make major improves in MRAM memory by electric voltage instead of a flowing electric current (which is used in STT-MRAM). They call the new memory MeRAM (Magnetoelectric Random Access Memory). The researchers say that MeRAM combines extraordinary low energy with very high density, high-speed reading and writing times, and non-volatility.
MeRAM could be 10 to 1,000 times more energy-efficient than STT-MRAM. It's also five times as dense (more bits…
Added by TINC on December 16, 2012 at 7:52pm — No Comments
Spingate announced that they invented a multi-bit Spin-RAM, which can store two bits per MTJ. It uses magnetic materials with perpendicular anisotropy and has a cell size of 4F2, which is the smallest currently reported in the industry. This kind of memory can provide a density of about 160 Gbits/in2 (0.257 Gbit/mm2) at 45 nm. Scaling it to 10 nm will enable 1 Tbits/in2.
If Spingate is successful in commercializing this technology, it could enable an MRAM device that can compete…
Added by TINC on November 23, 2012 at 8:11pm — No Comments
We just got word that Everspin will soon announce their first ST-MRAM product. From what we hear, the 64-Mbit chip is already sampling and clients are already evaluation it. Everspin is targeting the enterprise SSD market. Everspin's ST-MRAM chips will feature non-volatility, low latency and increased reliability.
If this is true, this is a very exciting moment for the MRAM industry, as many believe that Spin-Torque (ST-MRAM) technology will finally enable MRAM to reach high…
Added by TINC on November 13, 2012 at 7:00pm — No Comments
Crocus is developing MRAM memory and Memory-Logic chips. We interviewed their marketing officer, and he promises MRAM chips in 2012. He also says that the Russian plant will become online in 2013, and gives his views on the MRAM industry and market:
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