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Samaresh Das
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SAM

Latest Activity

Samaresh Das updated their profile
Mar 28, 2011
N R Karthikeyan left a comment for Samaresh Das
"Hi Thanks for accepting my request. Are you doing PhD ?"
Jun 5, 2009
Samaresh Das and N R Karthikeyan are now friends
Jun 5, 2009

Profile Information

I am...
Physicist
My research field or area of interest innanotechnology
Ge/Si nanostructures for electronic and optical device applications.
Interest in...
My principal research interests are in the field of Ge quantum dots for electronic and optical device applications. I have carried out extensive research work on nonvolatile flash memory and visible LED devices based on Ge nanocrystals embedded in high-k dielectric matrix. Room temperature infrared (near and mid IR) photoresponse from self assembled Ge/Si (001) quantum dots has been achieved. Influence of islands size and intermixing of Ge/Si on infrared photoluminescence peak position have been studied and the origin of different activation energies in temperature dependent photoluminescence spectra has been explained. Currently I am working on self assembled growth of Ge islands on focused ion beam patterned Si substrates.
Publication list
1. S. K. Ray, S. Das, K. Das, R. K. Singha, S. Manna, A. Dhar, "Structural and Optical Properties of Germaniun Nanostructures on Si (100) and Embedded in High-k Oxides", Nanoscale Research Letters 6:224 (2011); doi:10.1186/1556-276X-6-224.
2. S. Das, S. Manna, R. K. Singha, A. Anopchenko, N. Daldosso, L. Pavesi, A. Dhar, and S. K. Ray, “Light emission and floating gate memory characteristics of germanium nanocrystals”, Physica status solidi (a) 208, 635 (2011).
3. S. Das, R. K. Singha, S. Gangopadhyay, A. Dhar and S. K. Ray, “Microstrustural characteristics and phonon structures in luminescence from surface oxidized Ge nanocrystals embedded in HfO2 matrix”, Journal of Applied Physics 108, 053510(2010).
4. S. Das, R. K. Singha, S. Manna, S. Gangopadhyay, A. Dhar and S. K. Ray, “Microstrustural, chemical bonding, stress development and charge storage characteristics of Ge nanocrystals embedded in hafnium oxide”, Journal of Nanoparticle Research (2010), DOI 10.1007/s11051-010-0054-8.
5. R. K. Singha, S. Manna, S. Das, A Dhar and S K Ray, “Room temperature infrared photoresponse of self assembled Ge/Si(001)quantum dots grown by molecular beam epitaxy”, Applied Physics Letter 96, 233113 (2010).
6. S. K. Ray, R. K. Singha, S. Das, S. Manna, A. Dhar, “Ge based nanostructures for electronic and photonic devices”, Microelectronics reliability 50, 674 (2010).
7. R. K. Singha, S. Das, A. Dhar, S. K. Lahiri, and S. K. Ray, “Single Hole Charging at Room Temperature of Ge Quantum Dots Grown on Si(001) by Molecular Beam Epitaxy”, Nanoscience and Nanotechnology Letters 1, 1-5 (2009).
8. S. K. Ray, R. K. Singha, S. Das, K. Das, A. Dhar, “Properties of self-assembled Ge Islands grown by molecular beam epitaxy”, International J. Nanoechnology 6, 552 (2009).
9. S Das, R K Singha, K Das, A Dhar, and S K Ray, “Silicon Dioxide Embedded Germanium Nanocrystals Grown Using Molecular Beam Epitaxy for Floating Gate Memory Devices”, Journal of Nanoscience and Nanotechnology 9, 5484 (2008).
10. R K Singha, S Das, S Majumder, K Das, A Dhar, and S K Ray, “Evolution of strain and composition of Ge islands o Si(001) grown by molecular beam epitaxy during postgrowth annealing”, Journal of Applied Physics 103, 114301 (2008).
11. R K Singha, S Das, K Das, S Majumder,A Dhar, and S K Ray, “Shape and size distribution of MBE grown self-assembled Ge islands on Si (001) substrates”, J. Nanoscience and Nanotechnology 8, 4101 (2008).
12. S. P. Mondal, V. S. Reddy, S. Das, A. Dhar and S. K. Ray, “Memory effect in junction-like CdS nanocomposites/ conducting polymer poly [2-ethoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinylene] heterostructure”, Nanotechnology 19, 215306 (2008).
13. R. K. Singha, K. Das, S. Das, A. Dhar and S. K. Ray, “Characteristics of Ge nanocrystals grown by RF magnetron sputtering”, Advanced Materials Research 31, 89 (2008).
14. S. Das, K. Das, R. K. Singha, A. Dhar, and S. K. Ray, “Improved Charge Storage Characteristics of Ge Nanocrystals Embedded In Hafnium Oxide”, Applied Physics Letter 91, 233118 (2007).
15. V S Reddy, S Das, S K Ray and A Dhar, “Studies on conduction mechanisms of pentacene based diodes using impedance spectroscopy”, J. Phys. D: Appl. Phys. 40, 7687 (2007).
Researchgroup, Institute, University, School, Company name
www.iitkgp.ac.in
Researchgroup, Institute, Company, University, School webpage
http://www.dak.iitkgp.ernet.in/phd/profile.php?roll=06PH9706
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At 5:50pm on June 19, 2009, N R Karthikeyan said…
good to know... all the very best...
At 2:34pm on June 5, 2009, N R Karthikeyan said…
Hi
Thanks for accepting my request. Are you doing PhD ?
At 8:59pm on December 3, 2008, remi said…
Hello

Our company is a holder of patents and know how relating to a remote generated plasma thin film deposition/sputtering technology demonstrating much improved coating speeds and characteristics compared to the current industrial standard, magnetron technology. Our technology can lay down materials that magnetron is not capable of or has great difficult in doing so. We can also adapt our technology to most existing magnetron systems. As part of our strategic development, we are seeking to establish mutually beneficial partnerships with actors in this industry.

If this is of interest to you, we would welcome the opportunity to discuss this with you. For your information, please visit our site at www.plasma-quest.com where you will be able to judge the merits of our technology and its benefits,. I also invite you to download our 28 page HiTUS technology information document, which explains our technology in detail - www.plasma-quest.com/hitusintroduction.pdf - .

We look forward to hearing from you and thank you in advance for your attention to this email.

Kind regards

Rémi Mollicone

remi@plasma-quest.com
www.plasma-quest.com
Plasma Quest Ltd – International Business Development.
At 9:29pm on November 28, 2008, TINC said…
WELCOME TO THE NANOSCIENCE COMMUNITY!

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