My research field or area of interest innanotechnology
FABRICATION AND MODELLING
Nirmal .D, Vijayakumar .P, Shruthi and Mohan Kumar .N “Nanoscale Channel Engineered Double Gate MOSFET for Mixed Signal Applications using High-k Dielectric”, International journal of circuit theory and applications. (Wiley)Voiume 41, Issue 6, pp 608-618,2013. ( Impact Factor: 1.759).
Nirmal .D, Vijayakumar .P, Patrick Chella Samuel , Binola k Jebalin, and Mohan Kumar .N “Subthreshold analysis of nanoscale FinFETs for ultra low power application using high-k materials”, International Journal of Electronics.(Taylor and Francis) Volume 100, Issue 6,pp 803-817,2013. (Impact factor: 0.440).
Nirmal .D, Vijayakumar .P, Divya .D , Binola k Jebalin, and Mohan Kumar .N “Subthreshold Performance of Gate Engineered FinFET Devices and circuit with High-k Dielectrics”, Microelectronics Reliability(Elsevier) 53 (2013) 499–504. (Impact factor: 1.167).
Nirmal. D , Nalini .B and Cyril Robinson Azariah “ Fabrication and Characteristics of Flexible Thin Film Depletion Mode Field Effect Transistor (FET) using High-κ Dielectric Nano Zirconia” International Journal of Emerging Trends in Engineering and Development, Issue 3, Vol.2 pp.295-299. (March 2013).
Nirmal .D and Vijayakumar .P “Fin Field Effect Transistors Performance in Analog and RF for High-k Dielectrics” Defence Science Journal, Vol. 61, No. 3, pp. 235-240, May 2011. (Impact factor:0.304)
Nirmal .D, Shruti .K, Divya Mary Thomas, Patrick Chella Samuel, Vijayakumar .P and Mohan Kumar .N “Impact of Channel Engineering on FINFETs using High-k dielectrics” International Journal of Micro and Nano Electronics, Circuits and Systems, 3(1), pp. 7-11, 2011.
Nirmal .D, Nalini .B and Vijayakumar .P “Nano sized High K Dielectric Material for FINFET”, Integrated Ferroelectrics(Taylor and Francis), Volume 121, Issue 1, pp. 31 – 35, 2010.(Impact Factor: 0.264)
Nirmal .D, Vijayakumar .P and Sam Jebaraj “NAND Gate Using FINFET for Nanoscale technology”, International Journal of Engineering Science and Technology Vol.2 (5), pp. 1351-1358, 2010.
Nirmal .D and Vijayakumar .P “Gate Engineering on the Analog Performance of DM-DG MOSFETs with High K Dielectrics”, International Journal of Advanced Science and Technology Vol. 25, pp. 1-6, December, 2010.
Researchgroup, Institute, University, School, Company name
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