My research field or area of interest innanotechnology
• Deposition of thin film of metal oxides and various metal electrodes using RF magnetron sputtering and thermal evaporation systems equipped with rotary and diffusion pumps.
• Fabrication and electrical characterization of resistive memory device in metal-oxide-metal configuration both in sandwich and planar structure.
• Understanding the switching mechanism of oxide based memory device, the study of switching parameter (reset current, reset voltage, set current and set voltage) and the reliability and reproducibility of the devices.
• Modification of resistive switching properties by tuning the interfacial properties of metal-oxide interface using interlayer of organic and carbon based 2D material.
• Conducting atomic force microscopy used for direct switching of the memory cell and also for current imaging of two memory states (HRS and LRS).
Thin films and nanostructure deposition techniques, metal oxides semiconductors, metal-oxide interface properties, organic-inorganic hybrid interface properties, resistive random access memory device in metal-insulator-metal (MIM) configuration, 3D integration of memory structures, memristor, neuromorphic computing, conductive atomic force microscopy, kelvin probe force microscopy.
1. Bharti Singh, Deepak Varandani and Bodh Raj Mehta, “Effect of conductive atomic force microscope tip loading force on tip-sample interface electronic characteristics: Unipolar to bipolar resistive switching transition”, Applied Physics Letter, 103, 051604 (2013).
2. Bharti Singh, B. R. Mehta, Deepak Varandani, Govind, A. Narita, X. Feng, and K. Müllen, “Influence of electronic nature of organic monolayer material on the resistive switching properties of Ti-CuO/(6F-HBC)-Cu hybrid interface”, Journal of Applied Physics, 113, 203706 (2013).
3. Bharti Singh, B. R. Mehta, Deepak Varandani, Andreea Veronica Savu and Juergen Brugger, “CAFM investigations of filamentary conduction in Cu2O ReRAM devices fabricated using stencil lithography technique”, Nanotechnology, 23, 495707, (2012).
4. Bharti Singh, B. R. Mehta, M. Singh, Govind Gupta, L. Dössel, X. Feng and K. Mullen, “Electronic interaction and bipolar resistive switching in copper oxide-multilayer graphene hybrid interface; Graphene as an oxygen ion storage and blocking layer”, Applied Physics Letter, 99, 222109 (2011).
5. Bharti Singh, B. R. Mehta, M. Singh, Govind Gupta, L. Dössel, X. Feng, K. Müllen, “Structural and electronic interaction at CuO-Hexa-peri-hexabezocoronene hybrid interface”, Applied Physics Letter, 98, 072101 (2011).
6. Deepak Varandani, Bharti Singh, Bodh R. Mehta, Mandeep Singh, Vidya Nand Singh, and Dasees Gupta, “Resistive switching mechanism in delafossite-transition metal oxide (CuInO2-CuO) bilayer structure”, Journal of Applied Physics, 107, 103703 (2010).
Researchgroup, Institute, University, School, Company name
Thin Film Lab, Indian Institute of Technology Delhi, India
Researchgroup, Institute, Company, University, School webpage
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