A wide range of industrial processes use electrical plasmas, and new applications are developing rapidly. In the microelectronics industry the demands of higher yields and shrinking device geometries mean that process reproducibility and understanding is vital.

Hiden plasma probes measure some of the key plasma parameters and provide detailed information relating to plasma reaction chemistry.

Detailed understanding of the reaction kinetics of plasma ions and neutral species plays a key role in the development of advanced surface engineering processes, HIPIMS for example.

The EQP system directly measures mass and energy of both positive and negative process ions, measuring masses up to 2500amu and ion energies to 1000eV. The integral electron bombardment ion source provides for analysis of neutrals and, with the addition of the EAMS electron attachment mode, for separation and identification of electronegative radical species.

The fast pulse ion counting detector with continuous 7-decade dynamic range features new advanced data acquisition gating and timing functions enabling time-resolved studies for applications including pulsed plasma processes and modulated beam experiments, with sub-microsecond resolution and repetition rates to >20kHz. Acquired data is stored and integrated throughout a predetermined repetitive scan sequence for each individual acquisition time window.

• Mass and energy analysis of positive and negative ions.

• Neutrals and neutral radical analysis.

• Magnetic shielding options for magnetically confined plasma.

• Integral signal gating with automatic timing control for detailed pulsed plasma analysis

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