P15-17 Gallium Metal: Choice of Electrode for Orange Nitrogen Dye (OD)

Gallium Metal: Choice of Electrode for Orange Nitrogen Dye (OD)

S. A. Moiz (1), Kh. Karimov (2)

1Department of Electrical Engineering, College of Engineering and Islamic Architecture, Umm Al-Qura University, Makkah, KSA

2 GIK Institute of Engineering Sciences and Technology, Topi, Swabi, N.W.F.P., Pakistan, 23460

Orange nitrogen dye (OD) is a novel dye based organic semiconductor and have found many applications in humidity, temperature, photovoltaic and many other sensor and optoelectronic devices.  Despite of these application, many device fabrication issues, such as ohmic contact with OD, optimum film thickness etc, are not very clear and requires comprehensive investigations. Therefore, in this study a thorough investigation was made about charge injection efficiency between different metals electrodes such as aluminum (Al), gold (Au), tin oxide (SnO2), nickel (Ni) and gallium (Ga) to OD. For this purpose we have deposited metal electrode over glass substrate and then thin film of OD (nearly 200 nm) were deposited by spin coating onto metal deposited glass substrate. After devices fabrication, current voltage (I-V) characteristics of each device were investigated at elevated temperature and then charge injection efficiency of each device were calculated by well-reported GG Malliaras method. It is observed that, there is relatively better charge injection efficiency between gallium electrode and OD as compared to other metal electrodes.  Results clearly demonstrate that Ga metal may be used as an ohmic contact with organic semiconductor OD based electronic and optoelectronic devices.

 

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